Stanford EE Computer Systems Colloquium

4:15PM, Wednesday, Dec. 04. 2013
NEC Auditorium, Gates Computer Science Building Room B3

Next Generation Nonvolatile Memory and Its Impact on Systems Performance

Hagop Nazarian and Sung Hyun Jo
Crossbar Inc.
About the talk:

Flash memory technology has been serving the storage memory application markets for several decades. However, in recent years, further scaling of this technology has shown profound limitations. Currently, it is widely accepted that scaling Flash below 20nm has degraded performance and reliability, thus, resulting in significant overhead complexity and computational power-demand from the system. System manufacturers as well as Flash manufactures have begun the quest for a new technological solution. One of the most promising emerging technologies is Resistive Random Access Memory (RRAM) due to its scalability, fast operation and long data retention. In this session we will first provide an overview of current memory technology limitations and compare it to the promising attributes of Crossbar's nonvolatile RRAM technology. We will also cover the storage system performance benefits utilizing RRAM.


Download a copy of the slides for this presentation in PDF format.

About the speaker:

Hagop Nazarian, VP of Engineering and Co-founder of Crossbar Inc., has over 25 years of experience leading and directing R&D initiatives in the semiconductor industry. Prior to CrossBar, he served as VP of Design Engineering at Spansion, developing 65nm-45nm NOR products. As the Director of NAND Design at Micron, he formed the first design team developing 90nm-50nm NAND-Flash products. Hagop directed and led design and R&D engineering at Winbond, Cypress, and Xicor, where noteworthy projects included Mixed-Mode, PLD/CPLD, and EEPROM/Flash cell development respectively. As an Inventor, Hagop holds 78 issued and 15 pending patents. He holds an MSEE from Santa Clara University.

Dr. Sung Hyun Jo has been with Crossbar since 2010, where he leads the company's advanced memory technology development as a Fellow. He has over 10 years of experience in the research and development of emerging nonvolatile memory technology, with a special interest in RRAM and programmable logics based on RRAM devices. He has developed a 3D stackable high density crossbar memory and he also conducted the first demonstration of a hybrid memristive synapse/CMOS neuron system which emulates the synaptic functions of a biological system such as STDP (Spike Timing Dependent Plasticity) for the next generation intelligent systems. He has over 40 issued and pending patents. He received his Ph.D. from the University of Michigan.

Contact information:

Hagop Nazarian
3200 Patrick Henry Dr. Ste 110