Stanford EE Computer Systems Colloquium

4:30 PM, Wednesday, Mar 7, 2018
NEC Auditorium, Gates Computer Science Building Room B3

Computational memory: A stepping-stone to non-von Neumann computing?

Abu Sebastian
IBM Research Z&uumk;rich

About the talk:

In the advent of the data-centric AI era and the imminent end of CMOS scaling laws, the time is ripe to adopt computing units based on non-von Neumann computing architectures. A first step in this direction could be in-memory computing, where certain computational tasks are performed in place in a specialized memory unit called computational memory. Resistive memory devices, where information is represented in terms of atomic arrangements within tiny volumes of material, are poised to play a key role as elements of such computational memory units. I will present a few examples of how the physical attributes and dynamics of these devices can be exploited to achieve in-place computation. We expect that this co-existence of computation and storage at the nanometer scale could enable ultra-dense, low-power, and massively-parallel computing systems.


Download the slides for this presentation in PDF format.

About the speaker:

[speaker photo] Abu Sebastian is a Research Staff Member and Master Inventor at IBM Research - Zürich. He was a contributor to several key projects in the field of storage and memory technologies. Most recently, he has been pursuing research in the area of non-von Neumann computing with the intent of connecting the technological elements with applications such as machine learning. In 2015, he was awarded a European Research Council (ERC) consolidator grant for this work.

Contact information:

Abu Sebastian