About the talk:
In the advent of the data-centric AI era and the imminent end of CMOS scaling laws, the time is ripe to adopt computing units based on non-von Neumann computing architectures. A first step in this direction could be in-memory computing, where certain computational tasks are performed in place in a specialized memory unit called computational memory. Resistive memory devices, where information is represented in terms of atomic arrangements within tiny volumes of material, are poised to play a key role as elements of such computational memory units. I will present a few examples of how the physical attributes and dynamics of these devices can be exploited to achieve in-place computation. We expect that this co-existence of computation and storage at the nanometer scale could enable ultra-dense, low-power, and massively-parallel computing systems.
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About the speaker:
|Abu Sebastian is a Research Staff Member and Master Inventor at IBM Research - Zürich. He was a contributor to several key projects in the field of storage and memory technologies. Most recently, he has been pursuing research in the area of non-von Neumann computing with the intent of connecting the technological elements with applications such as machine learning. In 2015, he was awarded a European Research Council (ERC) consolidator grant for this work.|