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American Chemical Society, Division of Chemical Information, Education Committee: Computer Searching of Chemical Abstracts: Record Display Formats.

Record Display Formats

CA File

Registry File

IDE Format

 
L11  ANSWER 1 OF 1  REGISTRY  COPYRIGHT 1996 ACS
RN   14808-60-7  REGISTRY
CN   Quartz (SiO2) (9CI)  (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN    Quartz (8CI)

OTHER NAMES:
CN   .alpha.-Quartz
CN   Aventurine
CN   Aventurine (quartz)
CN   CRS 1101-17
CN   Crystalite 5K
CN   Crystalite A 1
CN   Crystalite A 2
CN   Crystalite AA
CN   Crystalite C
CN   Crystalite CRS
CN   Crystalite SS
CN   Crystalite VX-S 2
CN   Crystalite VX-X
CN   DQ 12
CN   HHH
CN   Inducarb 0.5-1
CN   Marshalite
CN   Millisil W 6
CN   Millisil W 6EST
CN   Plastorit
CN   Rock crystal
CN   SF 35
CN   Siderite (SiO2)
CN   Sifraco C 600
CN   Sikron 3000
CN   Sikron F 100
CN   Sikron F 600
CN   Sikron H 200
CN   Sikron H 500
CN   Sikron H 600
CN   Sikron SF 300
CN   Silbond 600EST
CN   Silbond FW 600EST
CN   Silbond FW 61EST
CN   Silbond VP 810-10/1EST
CN   TGL 16319
CN   Tiger-eye
CN   W 12
CN   W 12 (filler)
DR   122304-48-7, 122304-49-8, 87347-84-0, 12425-26-2, 1317-79-9
MF   O2 Si
CI   MNS, COM
LC   STN Files:   AIDSLINE, ANABSTR, APILIT, APILIT2, APIPAT, APIPAT2,
       BIOBUSINESS, BIOSIS, CA, CABA, CANCERLIT, CAPLUS, CAPREVIEWS, CEN,
       CHEMCATS, CHEMLIST, CBNB, CHEMSAFE, CIN, CJACS, CSCHEM, CSNB,
       DETHERM*, DIPPR*, IFICDB, IFIPAT, IFIUDB, IPA, JANAF*, MEDLINE,
       MSDS-OHS, MSDS-SUM, NISTTHERMO*, PIRA, PNI, PROMT, RTECS*,
       TOXLINE, TOXLIT, USPATFULL, VTB
         (*File contains numerically searchable property data)
     Other Sources:   DSL**, EINECS**, TSCA**
         (**Enter CHEMLIST File for up-to-date regulatory information)
DES  8:MN,QUARTZ
  

/ Structure 1 in file .gra /

             206 REFERENCES IN FILE CAPREVIEWS
           24738 REFERENCES IN FILE CA (1967 TO DATE)
              80 REFERENCES TO NON-SPECIFIC DERIVATIVES IN FILE CA
           24786 REFERENCES IN FILE CAPLUS (1967 TO DATE)

IDE CBIB Format

  
L11  ANSWER 1 OF 1  REGISTRY  COPYRIGHT 1996 ACS
RN   14808-60-7  REGISTRY
CN   Quartz (SiO2) (9CI)  (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN    Quartz (8CI)

OTHER NAMES:
CN   .alpha.-Quartz
CN   Aventurine
CN   Aventurine (quartz)
CN   CRS 1101-17
CN   Crystalite 5K
CN   Crystalite A 1
CN   Crystalite A 2
CN   Crystalite AA
CN   Crystalite C
CN   Crystalite CRS
CN   Crystalite SS
CN   Crystalite VX-S 2
CN   Crystalite VX-X
CN   DQ 12
CN   HHH
CN   Inducarb 0.5-1
CN   Marshalite
CN   Millisil W 6
CN   Millisil W 6EST
CN   Plastorit
CN   Rock crystal
CN   SF 35
CN   Siderite (SiO2)
CN   Sifraco C 600
CN   Sikron 3000
CN   Sikron F 100
CN   Sikron F 600
CN   Sikron H 200
CN   Sikron H 500
CN   Sikron H 600
CN   Sikron SF 300
CN   Silbond 600EST
CN   Silbond FW 600EST
CN   Silbond FW 61EST
CN   Silbond VP 810-10/1EST
CN   TGL 16319
CN   Tiger-eye
CN   W 12
CN   W 12 (filler)
DR   122304-48-7, 122304-49-8, 87347-84-0, 12425-26-2, 1317-79-9
MF   O2 Si
CI   MNS, COM
LC   STN Files:   AIDSLINE, ANABSTR, APILIT, APILIT2, APIPAT, APIPAT2,
       BIOBUSINESS, BIOSIS, CA, CABA, CANCERLIT, CAPLUS, CAPREVIEWS, CEN,
       CHEMCATS, CHEMLIST, CBNB, CHEMSAFE, CIN, CJACS, CSCHEM, CSNB,
       DETHERM*, DIPPR*, IFICDB, IFIPAT, IFIUDB, IPA, JANAF*, MEDLINE,
       MSDS-OHS, MSDS-SUM, NISTTHERMO*, PIRA, PNI, PROMT, RTECS*,
       TOXLINE, TOXLIT, USPATFULL, VTB
         (*File contains numerically searchable property data)
     Other Sources:   DSL**, EINECS**, TSCA**
         (**Enter CHEMLIST File for up-to-date regulatory information)
DES  8:MN,QUARTZ
  

/ Structure 2 in file .gra /

             206 REFERENCES IN FILE CAPREVIEWS
           24738 REFERENCES IN FILE CA (1967 TO DATE)
              80 REFERENCES TO NON-SPECIFIC DERIVATIVES IN FILE CA
           24786 REFERENCES IN FILE CAPLUS (1967 TO DATE)
 
REFERENCE  1:  125:74488  Manufacture of anisotropic permanent magnets
     from sintered strontium ferrite-quartz mixtures.  Bogdan, Boris N.;
     Chubrin, Vladimir A.; Konopleva, Natalya N. (Nauchno-
     Proizvodstvennoe Ob"edinenie "Magneton", USSR).  Russ. RU 2044351 C1
     950920  From: Izobreteniya 1995, (26), 254.  (Russian).  CODEN:
     RUXXE7.  APPLICATION: RU 93-93012873 930310.
 
REFERENCE  2:  125:74027  Plasma etching apparatus.  Ueda, Yoichi;
     Hayata, Hidenori (Sumitomo Metal Ind, Japan).  Jpn. Kokai Tokkyo
     Koho JP 08107102 A2 960423 Heisei, 5 pp.  (Japanese).  CODEN:
     JKXXAF.  APPLICATION: JP 94-239822 941004.
 
REFERENCE  3:  125:73786  Apparatus for manufacturing semiconductor.
     Hoshino, Masakazu; Watanabe, Tomoji; Uchino, Toshuki (Hitachi Ltd,
     Japan).  Jpn. Kokai Tokkyo Koho JP 08078339 A2 960322 Heisei, 6 pp.
     (Japanese).  CODEN: JKXXAF.  APPLICATION: JP 94-212360 940906.
 
REFERENCE  4:  125:73669  Semiconductor substrate for CCD solid imaging
     device and manufacture thereof.  Takizawa, Ritsuo (Sony Corp,
     Japan).  Jpn. Kokai Tokkyo Koho JP 08104592 A2 960423 Heisei, 7 pp.
     (Japanese).  CODEN: JKXXAF.  APPLICATION: JP 95-125359 950524.
     PRIORITY: JP 94-207957 940809.
 
REFERENCE  5:  125:73523  Modeling electrostatically deflectable
     microstructures and air damping effects.  Reuther, H. M.; Weinmann,
     M.; Fischer, M.; Von Muench, W.; Assmus, F. (Institute Semiconductor
     Engineering, Stuttgart University, Stuttgart, 70174, Germany).
     Sens. Mater., 8(5), 251-269 (English) 1996.  CODEN: SENMER.  ISSN:
     0914-4935.
 
REFERENCE  6:  125:72524  Growth of compound semiconductor crystals by
     vertical Bridgman or gradient freeze method.  Asahi, Toshiaki (Japan
     Enajii Kk, Japan).  Jpn. Kokai Tokkyo Koho JP 08109094 A2 960430
     Heisei, 5 pp.  (Japanese).  CODEN: JKXXAF.  APPLICATION: JP
     94-244165 941007.
 
REFERENCE  7:  125:72520  Manufacture of cadmium telluride crystals and
     molds for it.  Yamashita, Sadao; Kawasaki, Shuichi; Piitaa,
     Rudorufu; Fukuda, Tsuguo (Nippon Ketsusho Kogaku Kk, Japan).  Jpn.
     Kokai Tokkyo Koho JP 08104600 A2 960423 Heisei, 4 pp.  (Japanese).
     CODEN: JKXXAF.  APPLICATION: JP 94-259064 940929.
 
REFERENCE  8:  125:71349  Optical fiber amplifiers and repeater
     apparatus.  Odani, Jun; Uno, Tomoaki; Mitsuta, Masahiro (Matsushita
     Electric Ind Co Ltd, Japan).  Jpn. Kokai Tokkyo Koho JP 08116118 A2
     960507 Heisei, 11 pp.  (Japanese).  CODEN: JKXXAF.  APPLICATION: JP
     95-213730 950822.  PRIORITY: JP 94-198301 940823.
 
REFERENCE  9:  125:70896  A self-mode-locked Ti:sapphire laser with the
     pair of the quartz prism sequence.  Xing, Qirong; Zhang, Weili; Li,
     Peng; Wang, Chingyue (Dep. Precision Instrument, Tianjin Univ.,
     Tianjin, 300072, Peop. Rep. China).  Guangxue Xuebao, 16(1), 16-19
     (Chinese) 1996.  CODEN: GUXUDC.  ISSN: 0253-2239.
 
REFERENCE 10:  125:69978  MICROMEGAS: a high-granularity
     position-sensitive gaseous detector for high particle-flux
     environments.  Giomataris, Y.; Rebourgeard, Ph.; Robert, J. P.;
     Charpak, G. (CEA/DSM/DAPNIA/SED-C.E.-Saclay, Gif/Yvette, 91191,
     Fr.).  Nucl. Instrum. Methods Phys. Res., Sect. A, 376(1), 29-35
     (English) 1996.  CODEN: NIMAER.  ISSN: 0168-9002.

ALL Format

   
L11  ANSWER 1 OF 1  REGISTRY  COPYRIGHT 1996 ACS
RN   14808-60-7  REGISTRY    
CN   Quartz (SiO2) (9CI)  (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN    Quartz (8CI)

OTHER NAMES:
CN   .alpha.-Quartz
CN   Aventurine
CN   Aventurine (quartz)
CN   CRS 1101-17
CN   Crystalite 5K
CN   Crystalite A 1
CN   Crystalite A 2
CN   Crystalite AA
CN   Crystalite C
CN   Crystalite CRS
CN   Crystalite SS
CN   Crystalite VX-S 2
CN   Crystalite VX-X
CN   DQ 12
CN   HHH
CN   Inducarb 0.5-1
CN   Marshalite
CN   Millisil W 6
CN   Millisil W 6EST
CN   Plastorit
CN   Rock crystal
CN   SF 35
CN   Siderite (SiO2)
CN   Sifraco C 600
CN   Sikron 3000
CN   Sikron F 100
CN   Sikron F 600
CN   Sikron H 200
CN   Sikron H 500
CN   Sikron H 600
CN   Sikron SF 300
CN   Silbond 600EST
CN   Silbond FW 600EST
CN   Silbond FW 61EST
CN   Silbond VP 810-10/1EST
CN   TGL 16319
CN   Tiger-eye
CN   W 12
CN   W 12 (filler)
DR   122304-48-7, 122304-49-8, 87347-84-0, 12425-26-2, 1317-79-9
MF   O2 Si
CI   MNS, COM
LC   STN Files:   AIDSLINE, ANABSTR, APILIT, APILIT2, APIPAT, APIPAT2,
       BIOBUSINESS, BIOSIS, CA, CABA, CANCERLIT, CAPLUS, CAPREVIEWS, CEN,
       CHEMCATS, CHEMLIST, CBNB, CHEMSAFE, CIN, CJACS, CSCHEM, CSNB,
       DETHERM*, DIPPR*, IFICDB, IFIPAT, IFIUDB, IPA, JANAF*, MEDLINE,
       MSDS-OHS, MSDS-SUM, NISTTHERMO*, PIRA, PNI, PROMT, RTECS*,
       TOXLINE, TOXLIT, USPATFULL, VTB
         (*File contains numerically searchable property data)
     Other Sources:   DSL**, EINECS**, TSCA**
         (**Enter CHEMLIST File for up-to-date regulatory information)
DES  8:MN,QUARTZ
  

/ Structure 3 in file .gra /

             206 REFERENCES IN FILE CAPREVIEWS
           24738 REFERENCES IN FILE CA (1967 TO DATE)
              80 REFERENCES TO NON-SPECIFIC DERIVATIVES IN FILE CA
           24786 REFERENCES IN FILE CAPLUS (1967 TO DATE)
 
REFERENCE  1
 
AN   125:74488  CA
TI   Manufacture of anisotropic permanent magnets from sintered strontium
     ferrite-quartz mixtures
IN   Bogdan, Boris N.; Chubrin, Vladimir A.; Konopleva, Natalya N.
PA   Nauchno-Proizvodstvennoe Ob"edinenie "Magneton", USSR
SO   Russ.
From: Izobreteniya 1995, (26), 254.
     CODEN: RUXXE7
PI   RU 2044351 C1  950920
AI   RU 93-93012873  930310
DT   Patent
LA   Russian
IC   ICM  H01F001-08
CC   77-3 (Magnetic Phenomena)
AB   Title only translated.
ST   sintered magnet strontium ferrite quartz mixt
IT   Magnets
        (sintered, anisotropic permanent magnets from sintered strontium
        ferrite-quartz mixts.)
IT   12627-93-9, Strontium ferrite
     RL: TEM (Technical or engineered material use); USES (Uses)
        (ferrite, sintered; anisotropic permanent magnets from sintered
        strontium ferrite-quartz mixts.)
IT   14808-60-7, Quartz, uses
     RL: MOA (Modifier or additive use); USES (Uses)
        (sintered mixt. with; anisotropic permanent magnets from sintered
        strontium ferrite-quartz mixts.)
 
REFERENCE  2
 
AN   125:74027  CA
TI   Plasma etching apparatus
IN   Ueda, Yoichi; Hayata, Hidenori
PA   Sumitomo Metal Ind, Japan
SO   Jpn. Kokai Tokkyo Koho, 5 pp.
     CODEN: JKXXAF
PI   JP 08107102 A2  960423  Heisei
AI   JP 94-239822  941004
DT   Patent
LA   Japanese
IC   ICM  H01L021-3065; C23F004-00
CC   76-11 (Electric Phenomena)
AB   The plasma etching app. is made up of a reaction vessel, an upper
     electrode, and a lower electrode as a sample holder, and a high
     frequency is impressed between the electrodes.  The upper electrode
     is made from a high-purity Si, and has a quartz cover.  The app. is
     used for etching of a polysilicon film.
ST   plasma etching app silicon electrode; polysilicon etching plasma
     app; quartz cover plasma etching app
IT   Sputtering
        (etching, app. for etching polysilicon films)
IT   Etching
        (sputter, app. for etching polysilicon films)
IT   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (electrode cover of plasma etching app.)
IT   7440-21-3, Silicon, uses
     RL: DEV (Device component use); USES (Uses)
        (electrode of plasma etching app.)
 
REFERENCE  3
 
AN   125:73786  CA
TI   Apparatus for manufacturing semiconductor
IN   Hoshino, Masakazu; Watanabe, Tomoji; Uchino, Toshuki
PA   Hitachi Ltd, Japan
SO   Jpn. Kokai Tokkyo Koho, 6 pp.
     CODEN: JKXXAF
PI   JP 08078339 A2  960322  Heisei
AI   JP 94-212360  940906
DT   Patent
LA   Japanese
IC   ICM  H01L021-205; H01L021-3065
CC   76-3 (Electric Phenomena)
AB   In the app., such as CVD, comprising a rection container,
     gas-supplement- and exhausting systems, wafer-heating and -cooling
     systems, and plasma source, and used for film forming or etching of
     a wafer; a substance differing from the reaction container is coated
     on inner wall of the container.  In the app., multiple substances
     (differing from the reaction container) to be etched are arranged in
     the container.  Preferably, reaction container is made of quartz,
     and the coating film Si3N4.  A reaction products adhered on inner
     wall of the container can be removed by etching without damaging the
     container, and time to finish the etching is detd. by analyzing
     changes of the waste gas concn. or film thickness.
ST   semiconductor manuf CVD protective coating; etching app protective
     coating semiconductor manuf; film deposition app semiconductor manuf
IT   Semiconductor devices
     Semiconductor materials
     Vapor deposition processes
        (CVD reaction chamber with protective inner wall coating for
        semiconductor material etching and fabrication)
IT   Etching
     Sputtering
        (app., CVD reaction chamber with protective inner wall coating
        for semiconductor material etching and fabrication)
IT   Electric discharge devices
        (sputtering, CVD reaction chamber with protective inner wall
        coating for semiconductor material etching and fabrication)
IT   7631-86-9P, Silicon dioxide, processes
     RL: BYP (Byproduct); REM (Removal or disposal); PREP (Preparation);
     PROC (Process)
        (CVD reaction chamber with protective inner wall coating for
        semiconductor material etching and fabrication)
IT   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (CVD reaction chamber with protective inner wall coating for
        semiconductor material etching and fabrication)
IT   7790-91-2, Chlorine fluoride (clf3)
     RL: NUU (Nonbiological use, unclassified); RCT (Reactant); USES
     (Uses)
        (CVD reaction chamber with protective inner wall coating for
        semiconductor material etching and fabrication)
IT   12033-89-5, Silicon nitride, processes
     RL: PEP (Physical, engineering or chemical process); TEM (Technical
     or engineered material use); PROC (Process); USES (Uses)
        (CVD reaction chamber with protective inner wall coating for
        semiconductor material etching and fabrication)
 
REFERENCE  4
 
AN   125:73669  CA
TI   Semiconductor substrate for CCD solid imaging device and manufacture
     thereof
IN   Takizawa, Ritsuo
PA   Sony Corp, Japan
SO   Jpn. Kokai Tokkyo Koho, 7 pp.
     CODEN: JKXXAF
PI   JP 08104592 A2  960423  Heisei
AI   JP 95-125359  950524
PRAI JP 94-207957  940809
DT   Patent
LA   Japanese
IC   ICM  C30B015-10; C03B020-00; H01L023-14; H01L027-14
CC   76-3 (Electric Phenomena)
     Section cross-reference(s): 74, 75
AB   The semiconductor substrate is a single crystal grown from a
     semiconductor melt in a quartz crucible which contains .ltoreq.0.1
     ppm of alkali metal impurities.  The process comprises forming a CCD
     solid state imaging device on the substrate.  The process reduces a
     dark current and a no. of white dots in the CCD semiconductor
     substrate which is formed by using CZ and MCZ methods.
ST   charge coupled device semiconductor substrate; CCD semiconductor
     substrate single crystal impurity
IT   Crucibles
     Semiconductor materials
        (alkali metal impurities in quartz crucibles for making CCD
        substrates)
IT   Alkali metals, uses
     RL: NUU (Nonbiological use, unclassified); USES (Uses)
        (alkali metal impurities in quartz crucibles for making CCD
        substrates)
IT   Semiconductor devices
        (charge-coupled, alkali metal impurities in quartz crucibles for
        making CCD substrates)
IT   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (alkali metal impurities in quartz crucibles for making CCD
        substrates)
 
REFERENCE  5
 
AN   125:73523  CA
TI   Modeling electrostatically deflectable microstructures and air
     damping effects
AU   Reuther, H. M.; Weinmann, M.; Fischer, M.; Von Muench, W.; Assmus,
     F.
CS   Institute Semiconductor Engineering, Stuttgart University,
     Stuttgart, 70174, Germany
SO   Sens. Mater. (1996), 8(5), 251-269
     CODEN: SENMER; ISSN: 0914-4935
DT   Journal
LA   English
CC   76-14 (Electric Phenomena)
AB   Simulating the behavior of micromachined structures is essential to
     understand or predict their properties.  Since the different effects
     influencing the behavior of the microstructures must be simulated
     with special simulation tools, these tools are coupled.  As an
     example, the simulation of the deflection of a surface-micromachined
     polysilicon cantilever driven by electrostatic forces is presented
     in this paper.  The calcd. overall deflection of the cantilever is
     compared with exptl. results.  The contour of the cantilever during
     deflection due to the applied electrostatic field can be precisely
     predicted by the simulation.  On the other hand, the vibration of a
     piezoelec. driven quartz resonator oscillating in air is simulated.
     Exact knowledge of the velocity field of the surrounding air is
     important in order to improve the performance of such a quartz
     resonator, if it is used as a noncontact profile sensor.  In this
     work, the FEM program FIDAP is used for hydrodynamic simulations and
     the FEM program ANSYS is applied for electrostatic, piezoelec. and
     mech. simulations.  Problems with simple geometry are simulated and
     the results are compared with the anal. solns. so the calcns. can be
     verified.  An alternative to the comparison with anal. solvable
     models is comparing the simulated behavior of the microstructures
     with exptl. results.  The described method of modeling microsystems
     and their dependence on external fields suggests a possible way to
     understand the properties of microsensors in order to improve their
     selectivity and sensitivity by coupling simulation tools and using
     them instead of expts.
ST   microsensor electrostatic deflection simulation; quartz piezoelec
     resonator air damping simulation
IT   Oscillators and Resonators
        (quartz, piezoelec.; modeling electrostatically deflectable
        microstructures and air damping effects)
IT   Semiconductor devices
        (silicon cantilevers; modeling electrostatically deflectable
        microstructures and air damping effects)
IT   Electric field
        (electrostatic, modeling electrostatically deflectable
        microstructures and air damping effects)
IT   Sensors
        (miniaturized, modeling electrostatically deflectable
        microstructures and air damping effects)
IT   7440-21-3, Silicon, uses
     RL: DEV (Device component use); USES (Uses)
        (cantilever; modeling electrostatically deflectable
        microstructures and air damping effects)
IT   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (piezoelec. resonator; modeling electrostatically deflectable
        microstructures and air damping effects)
 
REFERENCE  6
 
AN   125:72524  CA
TI   Growth of compound semiconductor crystals by vertical Bridgman or
     gradient freeze method
IN   Asahi, Toshiaki
PA   Japan Enajii Kk, Japan
SO   Jpn. Kokai Tokkyo Koho, 5 pp.
     CODEN: JKXXAF
PI   JP 08109094 A2  960430  Heisei
AI   JP 94-244165  941007
DT   Patent
LA   Japanese
IC   ICM  C30B011-00; C30B029-48
ICA  H01L021-208
CC   75-1 (Crystallography and Liquid Crystals)
AB   The title process comprises charging of a vapor pressure-controlling
     element or compd. in a reservoir and material(s) having .gtoreq.2
     elements in a crucible permeable for the vapor of the vapor
     pressure-controlling element (e.g., from porous graphite, C, BN
     sinter, Al2O3, or porous quartz) to be vacuum-sealed in a quartz
     ampule, and placement of the ampule in a vertical furnace for
     melting of the materials and growth therefrom while controlling the
     vapor pressure with the reservoir.  Decrease of the concn. of the
     volatile element in the melt in progress of growth downward from the
     surface of the melt is prevented by contact of the melt with the
     vapor through the crucible wall, and a crystal uniform in compn. in
     the vertical direction is obtained.
ST   Bridgman vertical compd semiconductor; gradient freeze vertical
     compd semiconductor; crucible vapor permeable growth compd
     semiconductor; reserve vapor pressure control growth
IT   Crucibles
        (vapor-permeable; for growth of compd. semiconductors in quartz
        ampules by vertical boat method with vapor pressure-controlling
        reservoirs)
IT   Crystal growth
        (Bridgman, growth of compd. semiconductors in vapor-permeable
        crucibles with vapor pressure-controlling reservoirs)
IT   Crystal growth
        (gradient-freeze, vertical; growth of compd. semiconductors in
        vapor-permeable crucibles with vapor pressure-controlling
        reservoirs)
IT   1344-28-1, Aluminum oxide, uses   7440-44-0, Carbon, uses
     7631-86-9, Silica, uses   7782-42-5, Graphite, uses   10043-11-5,
     Boron nitride, uses   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (for vapor-permeable crucible in vapor pressure-controlled
        vertical boat growth of compd. semiconductors)
IT   1306-25-8P, Cadmium telluride, processes   178255-71-5P, Cadmium
     zinc telluride (Cd0.97-0.98Zn0.02-0.03Te)
     RL: PEP (Physical, engineering or chemical process); SPN (Synthetic
     preparation); PREP (Preparation); PROC (Process)
        (single crystal; growth in vapor-permeable crucibles with vapor
        pressure-controlling reservoirs by vertical boat method)
 
REFERENCE  7
 
AN   125:72520  CA
TI   Manufacture of cadmium telluride crystals and molds for it
IN   Yamashita, Sadao; Kawasaki, Shuichi; Piitaa, Rudorufu; Fukuda,
     Tsuguo
PA   Nippon Ketsusho Kogaku Kk, Japan
SO   Jpn. Kokai Tokkyo Koho, 4 pp.
     CODEN: JKXXAF
PI   JP 08104600 A2  960423  Heisei
AI   JP 94-259064  940929
DT   Patent
LA   Japanese
IC   ICM  C30B029-48; C30B011-00; C30B035-00; H01L021-208
CC   75-1 (Crystallography and Liquid Crystals)
AB   The title process comprises charging materials in a stoichiometric
     ratio simultaneously with installation of a mold, which is made of a
     no. of divided shapes from graphite or quartz and has vertically
     penetrating hollows of a desired shape, into an ampul, evacuation
     and sealing of the ampul, and growth of the crystal by the Bridgman
     or gradient freeze method.  Crystals of high resistance in a molded
     shape are obtained by elimination of the portion grown on and above
     the mold, where Cd is deficient due to evapn. of Cd into the upper
     space in the ampul.
ST   Bridgman growth cadmium telluride mold; gradient freeze growth
     cadmium telluride
IT   Molds (forms)
        (for growth of cadmium telluride by Bridgman or gradient freeze
        method)
IT   Crystal growth
        (Bridgman, of cadmium telluride in molded shapes in ampuls)
IT   Crystal growth
        (gradient-freeze, of cadmium telluride in molded shapes in
        ampuls)
IT   1306-25-8, Cadmium telluride, processes
     RL: PEP (Physical, engineering or chemical process); PROC (Process)
        (crystal growth in molds placed in ampuls by Bridgman or gradient
        freeze method)
IT   7782-42-5, Graphite, uses   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (growth of cadmium telluride by Bridgman or gradient freeze
        method in molds from)
 
REFERENCE  8
 
AN   125:71349  CA
TI   Optical fiber amplifiers and repeater apparatus
IN   Odani, Jun; Uno, Tomoaki; Mitsuta, Masahiro
PA   Matsushita Electric Ind Co Ltd, Japan
SO   Jpn. Kokai Tokkyo Koho, 11 pp.
     CODEN: JKXXAF
PI   JP 08116118 A2  960507  Heisei
AI   JP 95-213730  950822
PRAI JP 94-198301  940823
DT   Patent
LA   Japanese
IC   ICM  H01S003-10; G02F001-35; H01S003-07; H01S003-17; H04B010-17;
          H04B010-16
CC   73-11 (Optical, Electron, and Mass Spectroscopy and Other Related
     Properties)
AB   The app. comprises a pump laser diode and Er-doped quartz fibers for
     amplifying .gtoreq.2 signal lights (having different wavelengths and
     different intensities) with the same gain.
ST   optical fiber amplifier repeater app
IT   Lasers
     Optical fibers
        (optical fiber amplifiers and repeater app.)
IT   Optical imaging devices
        (intensifiers, optical fiber amplifiers and repeater app.)
IT   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (optical fiber amplifiers and repeater app.)
IT   7440-52-0, Erbium, uses
     RL: DEV (Device component use); MOA (Modifier or additive use); USES
     (Uses)
        (optical fiber amplifiers and repeater app.)
 
REFERENCE  9
 
AN   125:70896  CA
TI   A self-mode-locked Ti:sapphire laser with the pair of the quartz
     prism sequence
AU   Xing, Qirong; Zhang, Weili; Li, Peng; Wang, Chingyue
CS   Dep. Precision Instrument, Tianjin Univ., Tianjin, 300072, Peop.
     Rep. China
SO   Guangxue Xuebao (1996), 16(1), 16-19
     CODEN: GUXUDC; ISSN: 0253-2239
DT   Journal
LA   Chinese
CC   73-10 (Optical, Electron, and Mass Spectroscopy and Other Related
     Properties)
AB   Dispersive formulas were derived for the paired prism sequence based
     on the second and the third deriv. dispersive formulas proposed by
     Fork et al.  Calcns. using the proposed formulas showed that the
     third-order dispersion for quartz prism sequence was smaller than
     LaF prism pair under similar second-order dispersion.  Exptl.
     results of the self-mode-locked Ti:sapphire with quartz prism
     sequence were in good agreement with the theor. anal.
ST   laser quartz prism sequence dispersion formula
IT   Lasers
        (self-mode-locked titanium-sapphire laser with paired quartz
        prism sequence)
IT   13709-38-1, Lanthanum fluoride   14808-60-7, Quartz, uses
     RL: DEV (Device component use); USES (Uses)
        (self-mode-locked titanium-sapphire laser with paired quartz
        prism sequence)
 
REFERENCE 10
 
AN   125:69978  CA
TI   MICROMEGAS: a high-granularity position-sensitive gaseous detector
     for high particle-flux environments
AU   Giomataris, Y.; Rebourgeard, Ph.; Robert, J. P.; Charpak, G.
CS   CEA/DSM/DAPNIA/SED-C.E.-Saclay, Gif/Yvette, 91191, Fr.
SO   Nucl. Instrum. Methods Phys. Res., Sect. A (1996), 376(1), 29-35
     CODEN: NIMAER; ISSN: 0168-9002
DT   Journal
LA   English
CC   71-7 (Nuclear Technology)
AB   A novel structure is described for a gaseous detector that is under
     development at Saclay.  It consists of a two-stage parallel-plate
     avalanche chamber of small amplification gap (100 .mu.m) combined
     with a conversion-drift space.  It follows a fast removal of pos.
     ions produced during the avalanche development.  Fast signals
     (.ltoreq.1 ns) are obtained during the collection of the electron
     avalanche on the anode microstrip plane.  The pos. ion signal has a
     duration of 100 ns.  The fast evacuation of pos. ions combined with
     the high granularity of the detector provide a high rate capability.
     Gas gains of up to 105 have been achieved.
ST   gaseous detector high particle flux environment; radiation detector
     high particle flux environment; two stage parallel plate avalanche
     chamber; electroformed micromesh MICROMEGAS avalanche chamber;
     position sensitive high granularity gaseous detector
IT   Radiation counters and detectors
        (avalanche, parallel-plate, MICROMEGAS high-granularity
        position-sensitive gaseous detector for high particle-flux
        environments)
IT   61762-54-7, Argon-methane mixt.
     RL: DEV (Device component use); PEP (Physical, engineering or
     chemical process); PRP (Properties); PROC (Process); USES (Uses)
        (MICROMEGAS high-granularity position-sensitive gaseous detector
        for high particle-flux environments)
IT   25036-53-7, Kapton
     RL: NUU (Nonbiological use, unclassified); USES (Uses)
        (anode substrate; MICROMEGAS high-granularity position-sensitive
        gaseous detector for high particle-flux environments)
IT   7440-50-8, Copper, uses
     RL: NUU (Nonbiological use, unclassified); USES (Uses)
        (anode; MICROMEGAS high-granularity position-sensitive gaseous
        detector for high particle-flux environments)
IT   7440-02-0, Nickel, uses
     RL: NUU (Nonbiological use, unclassified); USES (Uses)
        (electroformed micromesh; MICROMEGAS high-granularity
        position-sensitive gaseous detector for high particle-flux
        environments)
IT   14808-60-7, Quartz, uses
     RL: NUU (Nonbiological use, unclassified); USES (Uses)
        (fibers; MICROMEGAS high-granularity position-sensitive gaseous
        detector for high particle-flux environments)

CN Format

L11  ANSWER 1 OF 1  REGISTRY  COPYRIGHT 1996 ACS
CN   Quartz (SiO2) (9CI)  (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN    Quartz (8CI)

OTHER NAMES:
CN   .alpha.-Quartz
CN   Aventurine
CN   Aventurine (quartz)
CN   CRS 1101-17
CN   Crystalite 5K
CN   Crystalite A 1
CN   Crystalite A 2
CN   Crystalite AA
CN   Crystalite C
CN   Crystalite CRS
CN   Crystalite SS
CN   Crystalite VX-S 2
CN   Crystalite VX-X
CN   DQ 12
CN   HHH
CN   Inducarb 0.5-1
CN   Marshalite
CN   Millisil W 6
CN   Millisil W 6EST
CN   Plastorit
CN   Rock crystal
CN   SF 35
CN   Siderite (SiO2)
CN   Sifraco C 600
CN   Sikron 3000
CN   Sikron F 100
CN   Sikron F 600
CN   Sikron H 200
CN   Sikron H 500
CN   Sikron H 600
CN   Sikron SF 300
CN   Silbond 600EST
CN   Silbond FW 600EST
CN   Silbond FW 61EST
CN   Silbond VP 810-10/1EST
CN   TGL 16319
CN   Tiger-eye
CN   W 12
CN   W 12 (filler)

RN Format

L11  ANSWER 1 OF 1  REGISTRY  COPYRIGHT 1996 ACS
RN   14808-60-7  REGISTRY

RN CBIB Format

   
L11  ANSWER 1 OF 1  REGISTRY  COPYRIGHT 1996 ACS
RN   14808-60-7  REGISTRY
 
REFERENCE  1:  125:74488  Manufacture of anisotropic permanent magnets
     from sintered strontium ferrite-quartz mixtures.  Bogdan, Boris N.;
     Chubrin, Vladimir A.; Konopleva, Natalya N. (Nauchno-
     Proizvodstvennoe Ob"edinenie "Magneton", USSR).  Russ. RU 2044351 C1
     950920  From: Izobreteniya 1995, (26), 254.  (Russian).  CODEN:
     RUXXE7.  APPLICATION: RU 93-93012873 930310.
 
REFERENCE  2:  125:74027  Plasma etching apparatus.  Ueda, Yoichi;
     Hayata, Hidenori (Sumitomo Metal Ind, Japan).  Jpn. Kokai Tokkyo
     Koho JP 08107102 A2 960423 Heisei, 5 pp.  (Japanese).  CODEN:
     JKXXAF.  APPLICATION: JP 94-239822 941004.
 
REFERENCE  3:  125:73786  Apparatus for manufacturing semiconductor.
     Hoshino, Masakazu; Watanabe, Tomoji; Uchino, Toshuki (Hitachi Ltd,
     Japan).  Jpn. Kokai Tokkyo Koho JP 08078339 A2 960322 Heisei, 6 pp.
     (Japanese).  CODEN: JKXXAF.  APPLICATION: JP 94-212360 940906.
 
REFERENCE  4:  125:73669  Semiconductor substrate for CCD solid imaging
     device and manufacture thereof.  Takizawa, Ritsuo (Sony Corp,
     Japan).  Jpn. Kokai Tokkyo Koho JP 08104592 A2 960423 Heisei, 7 pp.
     (Japanese).  CODEN: JKXXAF.  APPLICATION: JP 95-125359 950524.
     PRIORITY: JP 94-207957 940809.
 
REFERENCE  5:  125:73523  Modeling electrostatically deflectable
     microstructures and air damping effects.  Reuther, H. M.; Weinmann,
     M.; Fischer, M.; Von Muench, W.; Assmus, F. (Institute Semiconductor
     Engineering, Stuttgart University, Stuttgart, 70174, Germany).
     Sens. Mater., 8(5), 251-269 (English) 1996.  CODEN: SENMER.  ISSN:
     0914-4935.
 
REFERENCE  6:  125:72524  Growth of compound semiconductor crystals by
     vertical Bridgman or gradient freeze method.  Asahi, Toshiaki (Japan
     Enajii Kk, Japan).  Jpn. Kokai Tokkyo Koho JP 08109094 A2 960430
     Heisei, 5 pp.  (Japanese).  CODEN: JKXXAF.  APPLICATION: JP
     94-244165 941007.
 
REFERENCE  7:  125:72520  Manufacture of cadmium telluride crystals and
     molds for it.  Yamashita, Sadao; Kawasaki, Shuichi; Piitaa,
     Rudorufu; Fukuda, Tsuguo (Nippon Ketsusho Kogaku Kk, Japan).  Jpn.
     Kokai Tokkyo Koho JP 08104600 A2 960423 Heisei, 4 pp.  (Japanese).
     CODEN: JKXXAF.  APPLICATION: JP 94-259064 940929.
 
REFERENCE  8:  125:71349  Optical fiber amplifiers and repeater
     apparatus.  Odani, Jun; Uno, Tomoaki; Mitsuta, Masahiro (Matsushita
     Electric Ind Co Ltd, Japan).  Jpn. Kokai Tokkyo Koho JP 08116118 A2
     960507 Heisei, 11 pp.  (Japanese).  CODEN: JKXXAF.  APPLICATION: JP
     95-213730 950822.  PRIORITY: JP 94-198301 940823.
 
REFERENCE  9:  125:70896  A self-mode-locked Ti:sapphire laser with the
     pair of the quartz prism sequence.  Xing, Qirong; Zhang, Weili; Li,
     Peng; Wang, Chingyue (Dep. Precision Instrument, Tianjin Univ.,
     Tianjin, 300072, Peop. Rep. China).  Guangxue Xuebao, 16(1), 16-19
     (Chinese) 1996.  CODEN: GUXUDC.  ISSN: 0253-2239.
 
REFERENCE 10:  125:69978  MICROMEGAS: a high-granularity
     position-sensitive gaseous detector for high particle-flux
     environments.  Giomataris, Y.; Rebourgeard, Ph.; Robert, J. P.;
     Charpak, G. (CEA/DSM/DAPNIA/SED-C.E.-Saclay, Gif/Yvette, 91191,
     Fr.).  Nucl. Instrum. Methods Phys. Res., Sect. A, 376(1), 29-35
     (English) 1996.  CODEN: NIMAER.  ISSN: 0168-9002.
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