The superconducting/ferromagnetic proximity effect in hetero-structures of these two materials can be used in a wholly new memory concept that we have proposed. We are developing material systems suitable for implementing this new device concept.
Reference: A superconductive magnetoresistive memory element using controlled exchange interaction, O. Sangjun, D. Youm and M.R. Beasley, App. Phys. Lett. 71, 2376 (1997).