Refereed Publications (McIntyre PhD advisees shown in bold)

 

178. J. Ahn, T. Kent, E. Chagarov, K. Tang, A.C. Kummel, and P.C. McIntyre, “Arsenic Decapping and Pre-ALD Trimethylaluminum Passivation of Al2O3/InGaAs(100) Interfaces,” Appl. Phys. Lett. 103, 071602-1-4 (2013).

177. C.N. Ginestra and P.C. McIntyre, “Enhanced Performance and Endurance of -Porous Platinum Solid Oxide Fuel Cell Electrodes by Oxygen Partial Pressure Cycling,” MRS Comm. available on CJO July 2013. doi:10.1557/mrc.2013.25.

176. A.G. Scheuermann, J.D. Prange, M. Gunji, C.E.D. Chidsey, and P.C. McIntyre, “Effects of Catalyst Material and Atomic Layer Deposited TiO2 Oxide Thickness on the Water Oxidation Performance of Metal–Insulator–Silicon Anodes,” Energy Environ. Sci. 6, 2487-96 (2013).

175. F.S.M. Hashemi, S. Thombare, A. Fontcuberta i Morral, M.L. Brongersma, and P.C. McIntyre “Effects of Surface Oxide Formation on Germanium Nanowire Band-Edge Photoluminescence,” Appl. Phys. Lett. 102, 251122-1-5 (2013).

174. L. Zhang, M. Gunji, S. Thombare, and P.C. McIntyre “EOT Scaling of TiO2/Al2O3 on Germanium pMOSFETs and Impact of Gate Metal Selection,” IEEE Electron Dev. Lett. 34, 732-34 (2013).

173. R. Winter, J. Ahn, P.C. McIntyre, and M. Eizenberg, “New Method for Determining Flat-Band Voltage in High Mobility Semiconductors,” J. Vac. Sci. Technol. B 31, 030604 (2013).  

172. B. Yu, Y. Yuan, H.P. Chen, J. Ahn, P.C. McIntyre, and Y. Taur, “Effect and Extraction of Series Resistance in Al2O3-InGaAs MOS with Bulk-Oxide Trap,” Electronics Lett. 49, 492-93 (2013).  

171. R.D. Long, A. Hazeghi, M. Gunji, Y. Nishi, and P.C. McIntyre, “Temperature-Dependent Capacitance-Voltage Analysis of Defects in Al2O3 Gate Dielectric Stacks on GaN,” Appl. Phys. Lett. 101, 241606-1-5 (2012).

170. M. Gunji, S.V. Thombare, S. Hu, and P.C. McIntyre, “Directed Synthesis of Germanium Oxide Nanowires by Vapor-Liquid-Solid Oxidation,” Nanotechnology 23, 385603-1-7 (2012).

169. S.V. Thombare, A.F. Marshall, and P.C. McIntyre, “Size Effects in Vapor-Solid-Solid Ge Nanowire Growth with a Ni-Based Catalyst,” J. Appl. Phys. 112, 054325-1-6 (2012).

168. Y. Yuan, B. Yu, J. Ahn, P.C. McIntyre, P.M. Asbeck, M.J.W. Rodwell, and Y. Taur, “A Distributed Bulk-Oxide Trap Model for Al2O3 InGaAs MOS Devices,” IEEE Trans. Electon Dev. 59, 2100-06 (2012).

167. H.-P. Chen, Y. Yuan, B. Yu, J. Ahn, P.C. McIntyre, P. M. Asbeck, M.J.W. Rodwell, and Y. Taur, “Interface-State Modeling of Al2O3–InGaAs MOS From Depletion to Inversion,” IEEE Trans. Electron Dev. 59, 2383-89 (2012).

166. Y. Kawamura, K.C.Y. Huang, S.V. Thombare, S. Hu, M. Gunji, T. Ishikawa, M.L. Brongersma, K.M. Itoh, and P.C. McIntyre, “Direct-Gap Photoluminescence from Germanium Nanowires,” Phys. Rev. B 86, 035306-1-6 (2012).

165. R.D. Long and P.C. McIntyre, “Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices,” Materials 5, 1297-1335 (2012).

164. G.W. Paterson, S.J. Bentley, M.C. Holland, I. G. Thayne, J. Ahn, R. D. Long, P. C. McIntyre, and A. R. Long, “Admittance and Subthreshold Characteristics of Atomic-Layer-Deposition Al2O3 on In0.53Ga0.47As in Surface and Buried Channel Flatband Metal-Oxide-Semiconductor Field Effect Transistors,” J. Appl. Phys. 111, 104112-1-7 (2012).

163. S. Hu, Y. Kawamura, K.C.Y. Huang, Y. Li, A.F. Marshall, K.M. Itoh, M. Brongersma, and P.C. McIntyre,  “Thermal Stability and Surface Passivation of Ge Nanowires Coated by Epitaxial SiGe Shells,” Nano Lett. 12, 1385-92 (2012).

162. S. Hu and P.C. McIntyre, “Nucleation and Growth Kinetics during Metal-Induced Layer Exchange Crystallization of Ge Thin Films at Low Temperatures,” J. Appl. Phys. 111, 044908-1-9 (2012).

161. J. Ahn, I. Geppert, M. Gunji, M. Holland, I. Thayne, M. Eizenberg, and P.C. McIntyre, “Titania/alumina Bilayer Gate Insulators for InGaAs Metal-Oxide-Semiconductor Devices,” Appl. Phys. Lett. 99, 232902-1-3 (2011).

160. S. Swaminathan, Y. Sun, P. Pianetta, and P.C. McIntyre, “Ultrathin ALD-Al2O3 Layers for Ge(001) Gate Stacks: Local Composition Evolution and Dielectric Properties,” J. Appl. Phys. 110, 094105-1-6 (2011).

159. A.Y. Lin and P.C. McIntyre, “Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere Lithography on YSZ,” Electrochem. Solid State Lett. 14, B96-99 (2011).

158. R.J. Zednik, V. Anbusathaiah, M. Oliver, N. Valanoor, and P.C. McIntyre, Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect, Adv. Functional Mater. 21, 3104-10 (2011).

157. Y.W. Chen, J.D. Prange, S. Dühnen, Y. Park, M. Gunji, C.E.D. Chidsey, and P.C. McIntyre, Atomic Layer-Deposited Tunnel Oxide Stabilizes Silicon Photoanodes for Water Oxidation, Nature Mater. 10, 539-44 (2011).

156. R.D. Long, B. Shin, S. Monaghan, K. Cherkaoui, J. Cagnon, S. Stemmer, P.C. McIntyre, P.K. Hurley, Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors, J. Electrochem. Soc. 158, G103-07 (2011).

155. Y. Yuan, L.Q. Wang, B. Yu, B.H. Shin, J. Ahn, P.C. McIntyre, P.M. Asbeck, M.J.W. Rodwell, and Y. Taur, A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices, IEEE Electron. Dev. Lett. 32, 485-87 (2011).    

154. S.J. Bentley, M. Holland, X. Li, G.W. Paterson, H.P. Zhou, O. Ignatova, D. Macintyre, S. Thoms, A. Asenov, B.H. Shin, J. Ahn, P.C. McIntyre, and I.G. Thayne, Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 Gate Dielectric, IEEE Electron. Dev. Lett. 32, 494-96 (2011).    

153. M. Gunji, A.F. Marshall, and P.C. McIntyre, Strain Relaxation Mechanisms in Compressively Strained Thin SiGe-on-Insulator Films Grown by Selective Si Oxidation, J. Appl. Phys. 109, 014324-1-6 (2011).

152. E.J. Kim, M. Shandalov, K.C. Saraswat, and P.C. McIntyre, Inelastic Electron Tunneling Study of Crystallization Effects and Defect Energies in Hafnium Oxide Gate Dielectrics, Appl. Phys. Lett. 98, 032108-1-3 (2011).

151.A.F. Marshall, I.A. Goldthorpe, H. Adhikari, M. Koto, Y-C. Wang, L. Fu, E. Olsson, P.C. McIntyre, Hexagonal Close-Packed Structure of Au Nanocatalysts Solidified after Ge Nanowire Vapor-Liquid-Solid Growth, Nano Lett. 10, 3302-06 (2010).

150. K. Roodenko, I.A. Goldthorpe, P.C. McIntyre, and Y.J. Chabal, “Modified Phonon Confinement Model for Raman Spectroscopy of Nanostructured Materials,” Phys. Rev. B.82, 115210-1-11 (2010).

149. S. Hu, A.F. Marshall, and P.C. McIntyre, Interface-Controlled Layer Exchange in Metal-Induced Crystallization of Germanium Thin Films, Appl. Phys. Lett. 97, 082104-1-3 (2010).

148. C. Ko, M. Shandalov, P.C. McIntyre, and S. Ramanathan, High Temperature Electrical Conduction in Nanoscale Hafnia Films under Varying Oxygen Partial Pressure, Appl. Phys. Lett. 97, 082102-1-3 (2010).

147. S. Swaminathan and P.C. McIntyre, “Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics,” Electrochem. Solid-StateLett. 13, G79-82 (2010).

146. B. Shin, J.B. Clemens, M.A. Kelly, A.C. Kummel, and P.C. McIntyre, “Arsenic Decapping and Half-Cycle Reactions during Atomic Layer Deposition of Al2O3 on In0.53Ga0.47As (001),” Appl. Phys. Lett. 96, 252907-1-3 (2010).

145. M. Koto, A.F. Marshall, I.A. Goldthorpe, and P.C. McIntyre, “Gold-Catalyzed Vapor–Liquid–Solid Germanium-Nanowire Nucleation on Porous Silicon,” Small 6, 1032-37 (2010).

144.S. Swaminathan, M. Shandalov, Y. Oshima, and P.C. McIntyre, “Bilayer Metal Oxide Gate Insulators for Scaled Ge-Channel Metal-Oxide-Semiconductor Devices,” Appl. Phys. Lett. 96, 082904-1-3 (2010).

143. B. Shin, J.R. Weber, R.D. Long, P.K. Hurley, C.G. Van de Walle, and P.C.McIntyre, “Origin and Passivation of Fixed Charge in Atomic Layer Deposited Aluminum Oxide Gate Insulators on Chemically Treated InGaAs Substrates,” Appl. Phys. Lett. 96, 152908-1-3 (2010).

142. P.C. McIntyre, H. Adhikari, I.A. Goldthorpe, S. Hu, P.W. Leu, A.F. Marshall, and C.E.D. Chidsey, “Group IV Semiconductor Nanowire Arrays: Epitaxy in Different Contexts,” Semicond. Sci. Technol. 25, 024016-1-9 (2010).

141. Y.W. Chen, M. Liu, T. Kaneko, and P.C. McIntyre, “Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors,” Electrochem. Solid-State Lett. 13, G29-32 (2010).

140. E.J. Kim, L.Q. Wang, P.M. Asbeck, K.C. Saraswat, and P.C. McIntyre, “Border Traps in Al2O3/In0.53Ga0.47As (100) Gate Stacks and Their Passivation by Hydrogen Anneals,” Appl. Phys. Lett. 96, 012906-1-3 (2010)

139. E.J. Kim, E. Chagarov, J. Cagnon, Y. Yuan, A.C. Kummel, P.M. Asbeck, S. Stemmer, K.C. Saraswat, and P.C. McIntyre,”Atomically Abrupt and Unpinned Al2O3/ In0.53Ga0.47As Interfaces: Experiment and Simulation,” J. Appl. Phys. 106, 124508-1-8 (2009).

138. M.A. Panzer, M. Shandalov, J.A. Rowlette, Y. Oshima, Y.W. Chen, P.C.McIntyre, and K.E. Goodson, “Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films,” IEEE Electron Dev. Lett. 30, 1269-71 (2009).

137. I.A. Goldthorpe, A.F. Marshall and P.C. McIntyre, “Inhibiting Strain-Induced Surface Roughening: Dislocation-Free Ge/Si and Ge/SiGe Core-Shell Nanowires,” Nano Lett. 9, 3715-19 (2009).

136. M. Shandalov and P.C. McIntyre, “Size-dependent Polymorphism in HfO2 Nanotubes and Nanoscale Thin Films,” J. Appl. Phys. 106, 084332-1-5 (2009).

135. U. Singisetti, M.A. Wistey, G.J. Burek, A.K. Baraskar, B.J. Thibeault, A.C. Gossard, M.J. Rodwell, B. Shin, E.J. Kim, P.C. McIntyre, B. Yu, Y. Yuan, D. Wang, Y. Taur, P. Asbeck, and Y.J. Lee, (In0.53Ga0.47As Channel MOSFETs with Self-Aligned InAs Source/Drain Formed by MEE Regrowth,” IEEE ElectronDev. Lett. 30, 1128-30 (2009).

134. S. Hu, P.W. Leu, A.F. Marshall and P.C. McIntyre, “Single-Crystal Germanium Layers Grown on Silicon by Nanowire Seeding,” Nature Nanotechnology 4, 649-53 (2009).

133. J.B Ratchford, I.A Goldthorpe, Y. Sun, P.C. McIntyre, P.A. Pianetta, and C.E.D.Chidsey, “Gold Removal from Germanium Nanowires,” Langmuir 25, 9473-79(2009).

132. R.M. Wallace, P.C. McIntyre, J. Kim, and Y. Nishi, “Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors,” MRS Bull. 34, 493-503 (2009).

131. S. Swaminathan, Y. Oshima, M.A. Kelly, and P.C. McIntyre, “Oxidant Prepulsing of Ge (100) prior to Atomic Layer Deposition of Al2O3: In Situ Surface Characterization,” Appl. Phys. Lett. 95, 032907-1-3 (2009).

130. P.C. McIntyre, Y. Oshima, E. Kim, K.C. Saraswat, “Interface Studies of ALD-Grown Metal Oxide Insulators on Ge and III–V Semiconductors,” Microelectron. Engineering 86, 1536–39 (2009).

129. B. Shin, J. Cagnon, R.D. Long, P.K. Hurley, S. Stemmer, and P.C. McIntyre, “Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by AtomicLayer Deposition and Chemically Treated n-In0.53Ga0.47As (001),” Electrochem.                Solid-State Lett. 12, G40-43 (2009).

128. D. Choi, J.S. Harris, E. Kim, P.C. McIntyre, J. Cagnon, and S. Stemmer, “High-Quality III–V Semiconductor MBE Growth on Ge/Si Virtual Substrates for Metal-Oxide-Semiconductor Device Fabrication,” J. Crystal Growth 311, 1962-71 (2009).

127. Y. Oshima, M. Shandalov, Y. Sun, P. Pianetta, and P.C. McIntyre, “Hafnium Oxide/Germanium Oxynitride Gate Stacks on Germanium: Capacitance Scaling and Interface State Density,” Appl. Phys. Lett. 94, 183102-1-3 (2009).

126. J.B. Ratchford, I.A. Goldthorpe, P.C. McIntyre, and C.E.D. Chidsey, “Growth of Germanium Crystals from Electrodeposited Gold in Local Crucibles,” Appl. Phys. Lett. 94, 044103-1-3 (2009).

125. M. Koto, P.W. Leu, and P.C. McIntyre, “Vertical Germanium Nanowire Arrays in Microfluidic Channels for Charged Molecule Detection,” J. Electrochem. Soc. 156, K11-16 (2009).

124. P.W. Leu, H. Adhikari, M. Koto, K-H. Kim, P. de Rouffignac, A.F. Marshall, R.G. Gordon, C.E.D. Chidsey and P.C. McIntyre, “Oxide-Encapsulated Vertical Germanium Nanowire Structures and their DC Transport Properties,”Nanotechnology 19, 485705-1-9 (2008).

123. Y. Oshima, Y. Sun, D. Kuzum, T. Sugawara, K.C. Saraswat, P. Pianetta, and P.C. McIntyre, “Chemical Bonding, Interfaces, and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge(100),” J. Electrochem. Soc. 155, G304-09 (2008).

122. I.A. Goldthorpe, A.F. Marshall, and P.C. McIntyre, “Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays,” Nano Lett. 8, 4081-86 (2008).

121.  A. Delabie, D.P. Brunco, T. Conard, P. Favia, H. Bender, A. Franquet, S. Sioncke, W. Vandervorst, S. Van Elshocht, M. Heyns, M. Meuris, E. Kim, P.C. McIntyre, K.C. Saraswat, J.M. LeBeau, J.Cagnon, S. Stemmer, and W. Tsai, “Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation,” J. Electrochem. Soc. 155, H937-44 (2008).

120.  B. Shin, D. Choi, J.S. Harris, and P.C. McIntyre, ““Pre-Atomic Layer Deposition Surface Cleaning and Chemical Passivation of (100) In0.2Ga0.8As and Deposition of Ultrathin Al2O3 Gate insulators,” Appl. Phys. Lett. 93, 052911-1-3 (2008).

119. P.T. Chen, B.B. Triplett, J.J. Chambers, L. Colombo, P.C. McIntyre, and Y.  Nishi, “Analysis of Electrically Biased Paramagnetic Defect Centers in HfO2 and HfxSi1−xO2 /(100) Si Interfaces,” J. Appl. Phys. 104, 014106 (2008).

118. V. Schmidt, P.C. McIntyre and U. Göesele, “Morphological Instability of Misfit-Strained Core-Shell Nanowires,” Phys. Rev. B 77, 235302 (2008).

117. N. Ozguven and P.C. McIntyre, “Silicon-Germanium Interdiffusion in High-Germanium-Content Epitaxial Heterostructures,” Appl. Phys. Lett. 92, 181907-1-3 (2008).

116. D. Choi, E. Kim, P.C. McIntyre, and J.S. Harris, “Molecular-Beam Epitaxial Growth of III-V Semiconductors on Ge/Si for Metal-Oxide-Semiconductor Device Fabrication,” Appl. Phys. Lett. 92, 203502-1-3 (2008).

115. N. Ozguven and P.C. McIntyre, “Selective Oxidation of SiGe Alloys: A Route to Ge-on-Insulator Structures with Controlled Biaxial Strain,” Electrochem. Solid-State Lett. 11, H138-42 (2008).

114. P.T. Chen, Y. Sun, E. Kim, P.C. McIntyre, W. Tsai, M. Garner, P. Pianetta, Y. Nishi, and C.O. Chui, “HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition,” J. Appl. Phys. 103, 034106 (2008).

113. D. Kuzum, T. Krishnamohan, A.J. Pethe, A.K. Okyay, Y. Oshima, Y. Sun, J.P. McVittie, P.A. Pianetta, P.C. McIntyre, and K.C. Saraswat, “Ge-Interface Engineering with Ozone Oxidation for Low Interface-State Density,” IEEE Electron Dev. Lett. 29, 328-30 (2008).

112. H. Adhikari, A.F. Marshall, I.A. Goldthorpe, C.E. D. Chidsey, and P.C. McIntyre, “Metastability of Au−Ge Liquid Nanocatalysts: Ge Vapor–Liquid–Solid Nanowire Growth Far below the Bulk Eutectic Temperature,” ACS Nano 1, 415-22 (2007).

111. Y. Chen and P.C. McIntyre, “Effects of Chemical Stability of Platinum/Lead Zirconate Titanate and Iridium Oxide/Lead Zirconate Titanate interfaces on Ferroelectric Thin Film Switching Reliability,” Appl. Phys. Lett. 91, 232906-1-3 (2007). 

110. H. Adhikari, P.C. McIntyre, A.F. Marshall, and C.E.D. Chidsey, “Conditions for Subeutectic Growth of Ge nanowires by the Vapor-Liquid-Solid Mechanism,”  J. Appl. Phys. 102, 094311 (2007).

109. Y. Chen and P.C. McIntyre, “Lead Zirconate Titanate Ferroelectric Thin Film Capacitors: Effects of Surface Treatments on Ferroelectric Properties,” Appl. Phys. Lett. 91, 072910-1-3 (2007).

108. C.N. Ginestra,  R. Sreenivasan, A. Karthikeyan, S. Ramanathan, and P.C. McIntyre, “Atomic Layer Deposition of Y2O3/ZrO2 Nanolaminates: A Route to Ultrathin Solid-State Electrolyte Membranes,” Electrochem. Solid-State Lett. 10, B161-65 (2007).

107. J.H. Woodruff, J.B. Ratchford, I.A. Goldthorpe, P.C. McIntyre, and C.E.D. Chidsey, “Vertically Oriented Germanium Nanowires Grown from Gold Colloids on Silicon Substrates and Subsequent Gold Removal,” Nano Lett. 7, 1637-42 (2007).

106. R.J. Zednik, P.C. McIntyre, J.D. Baniecki, M. Ishii, T. Shioga, K. Kurihara, “Relaxorlike Dielectric Behavior in Ba0.7Sr0.3TiO3 Thin Films,” J. Appl. Phys. 101, 066104 (2007).

105. T. Sugawara, Y. Oshima, R. Sreenivasan, and P.C. McIntyre, “Electrical Properties of Germanium/Metal-Oxide Gate Stacks with Atomic Layer Deposition Grown Hafnium-Dioxide and Plasma-Synthesized Interface Layers,” Appl. Phys. Lett. 90, 112912-1-3 (2007).

104. J.H. Ha, K.I. Seo, P.C. McIntyre, K.C. Saraswat, and K. Cho, “Fluorine Incorporation at HfO2/SiO2 Interfaces in High-k Metal-Oxide-Semiconductor Gate Stacks: Local Electronic Structure,” Appl. Phys. Lett. 90, 112911-1-3 (2007).

103. R. Sreenivasan, T. Sugawara, K.C. Saraswat, and P.C. McIntyre, “High Temperature Phase Transformation of Tantalum Nitride Films Deposited by Plasma Enhanced Atomic Layer Deposition for Gate Electrode Applications,” Appl. Phys. Lett. 90, 102101-1-3 (2007).

102. Z. Wang, P.B. Griffin, J. McVittie, S. Wong, and P.C. McIntyre, and Y. Nishi, “Resistive Switching Mechanism in ZnxCd1-xS Nonvolatile Memory Devices,” IEEE Electron Dev. Lett. 28, 14-16 (2007).

101. J. Hong, D.W. Porter, R. Sreenivasan, P.C. McIntyre, and S.F. Bent, “ALD Resist Formed by Vapor-Deposited Self-Assembled Monolayers,” Langmuir 23, 1160-65 (2007).

100. J-H. Ha, P.C. McIntyre, and K. Cho, “First Principles Study of the HfO2/SiO2 Interface: Application to High-k Gate Structures,” J. Appl. Phys. 101 033706-1-6 (2007).

99. N. Ozguven and P.C. McIntyre, “Oxidation-Enhanced Interdiffusion in Si1-xGex Si1-yGey Superlattices,” Appl. Phys. Lett. 90 082109-1-3 (2007).

98.  K-I. Seo, D-I. Lee, P. Pianetta, H. Kim, K.C. Saraswat, and P.C. McIntyre, “Chemical States and Electrical Properties of a High-k Metal Oxide/Silicon Interface with Oxygen-Gettering Titanium-Metal-Overlayer,” Appl. Phys. Lett. 89, 142912-1-3 (2006). 

97. K-I. Seo, R. Sreenivasan, P.C. McIntyre, and K.C. Saraswat, “Improvement in High-k (HfO2/SiO2) Reliability by Incorporation of Fluorine,” IEEE Electron Dev. Lett. 27, 821-3 (2006).

96. R. Sreenivasan, P.C. McIntyre, H. Kim, and K.C. Saraswat, “Effect of Impurities on the Fixed Charge of Nanoscale HfO2 Films Grown by Atomic Layer Deposition,” Appl. Phys. Lett. 89, 112903-1-3 (2006).

95. A.K. Okyay, A.M. Nayfeh, K.C. Saraswat, T. Yonehara, A. Marshall, and P.C. McIntyre, “High-Efficiency Metal-Semiconductor-Metal Photodetectors on Heteroepitaxially Grown Ge on Si,” Optics Lett. 31, 2565-7 (2006).

94. T. Sugawara, R. Sreenivasan, and P.C. McIntyre, “Physical and Electrical Properties of Plasma Nitrided Germanium Oxynitride,” J. Vac. Sci. Technol. B. 24, 2449-56 (2006).

93. T. Sugawara, R. Sreenivasan, and P.C. McIntyre, “Mechanism of Germanium Plasma Nitridation,” J. Vac. Sci. Technol. B. 24, 2442-8 (2006).

92. H. Jagannathan, M. Deal, Y. Nishi, J. Woodruff, C. Chidsey, and P.C. McIntyre, “Nature of Germanium Nanowire Heteroepitaxy on Silicon Substrates,” J. Appl. Phys. 100, 024318 (2006).

91. C.O. Chui, H. Kim, D. Chi, P.C. McIntyre, and K.C. Saraswat, “Nanoscale Germanium MOS Dielectrics - Part II: High-kapp Gate Dielectrics,” IEEE Trans. Electron Dev. 53, 1509-16 (2006).

90. H. Kim and P.C. McIntyre, “Atomic Layer Deposition of Ultrathin Metal-Oxide Films for Nano-Scale Device Applications,” J. Korean Phys. Soc. 48, 5-17 (2006).

89. H. Adhikari, A.F. Marshall, C.E.D. Chidsey, and P.C. McIntyre, “Germanium Nanowire Epitaxy: Shape and Orientation Control,” Nano Lett. 6, 318-23 (2006).

88. K-I. Seo, D-I. Lee, P. Pianetta, H. Kim, K.C. Saraswat, and P.C. McIntyre, “Chemical States and Electrical Properties of a High- k Metal Oxide/Silicon Interface with Oxygen-Gettering Titanium-Metal-Overlayer,” Appl. Phys. Lett. 89, (2006).

87. H. Adhikari, P.C. McIntyre, S.Y. Sun, P. Pianetta, and C.E.D. Chidsey, Photoemission Studies of Passivation of Germanium Nanowires,” Appl. Phys. Lett. 87, 263109 (2005).

86. L.F. Welz, S.J. Welz, N.D. Browning, M. Kurasawa, and P.C. McIntyre, “Z-Contrast and Electron Energy Loss Spectroscopy Study of Passive Layer Formation at Ferroelectric PbTiO3/Pt Interfaces,” Appl. Phys. Lett. 87, 262904 (2005).

85. R-V. Wang, P.C. McIntyre, J.D. Baniecki, K. Nomura, T. Shioga, K. Kurihara, and M. Ishii, “Effect of Y Doping and Composition-Dependent Elastic Strain on the Electrical Properties of (Ba,Sr)TiO3 Thin Films Deposited at 520°C,” Appl. Phys. Lett. 87, 1-3 (2005). 

84. H. Kim, K.C. Saraswat, and P.C. McIntyre, “Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition,” J. Mater. Res. 20, 3125-32 (2005).

83.  D.B. Aubertine and P.C. McIntyre, “Influence of Ge Concentration and Compressive Biaxial Stress on Interdiffusion in Si-Rich SiGe Alloy Heterostructures,” J. Appl. Phys. 97, 13531-1 (2005).

82. R.-V. Wang and P.C. McIntyre, “O18 Tracer Diffusion in Pb(Zr,Ti)O3 Thin Films:  A Probe of Local Oxygen Vacancy Concentration,” J. Appl. Phys. 97, 023508-1 (2005).

81. A.F. Marshall, D.B. Aubertine, W.D. Nix, and P.C. McIntyre, “Misfit Dislocation dissociation and Lomer Formation in Low Mismatch SiGe/Si Heterostructures,” J. Mater. Res. 20, 447 (2005).

80. R. Chen, H. Kim, P.C. McIntyre, and S.F. Bent, “Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition,” Chem. Mater. 17, 536 (2005).

79. K.-I. Seo, P.C. McIntyre, H. Kim, and K.C. Saraswat, “Formation of an Interfacial Zr-Silicate Layer Between ZrO2 and Si through In Situ Vacuum Annealing,” Appl. Phys. Lett. 86, 82904-1 (2005).

78. R. Chen, H. Kim, P.C. McIntyre, D.W. Porter, and S.F. Bent, “Achieving Area-Selective Atomic Layer Deposition on Patterned Substrates by Selective Surface Modification,” Appl. Phys. Lett., 86, 191910-1 (2005)

77. M. Kurasawa and P.C. McIntyre, “Surface Passivation and Electronic Structure Characterization of PbTiO3 Thin Films and Pt/PbTiO3 Interfaces,” J. Appl. Phys. 97, 104110-1 (2005).

76. K.-I. Seo, P.C. McIntyre, S. Sun, D.-I. Lee, P. Pianetta, and K.C. Saraswat, “Chemical States and Electronic Structure of a HfO2/Ge(001) Interface,” Appl. Phys. Lett. 87, 42902-1 (2005).

75. J-H. Ha, D. Chi, and P.C. McIntyre, “In Situ Low-Angle X-Ray Scattering Study of Phase Separation in Initially Mixed HfO2-SiO2 Thin Film Interfaces,” Appl. Phys. Lett. 85, 5884-86 (2004).

74. D. Chi and P.C. McIntyre, “Film and Interface Layer Properties of Ultraviolet-Ozone Oxidized Hafnia and Zirconia Gate Dielectrics on Silicon Substrates,” Appl. Phys. Lett. 85, 5884-86 (2004).

73. H. Kim, P.C. McIntyre, C.O. Chui, K.C. Saraswat, and M.H. Cho, “Interfacial Characteristics of HfO2 Grown on Nitrided Ge (100) Substrates by Atomic-Layer Deposition,” Appl. Phys. Lett. 85, 2902-04 (2004).

72. H. Kim, P.C. McIntyre, C.O. Chui, K.C. Saraswat, and S. Stemmer, “Engineering Chemically Abrupt High-k Metal Oxide/Silicon Interfaces Using an Oxygen-Gettering Metal Overlayer,” J. Appl. Phys. 96, 3467-72 (2004).

71. D. Chi, C.O. Chui, K.C. Saraswat, B.B. Triplett, and P.C. McIntyre, “Zirconia Grown by Ultraviolet Ozone Oxidation on Germanium (100) Substrates,” J. Appl. Phys. 96, 813-19 (2004).

70. R. Chen, H. Kim, P.C. McIntyre, and S.F. Bent, “Self-Assembled Monolayer Resist for Atomic Layer Deposition of HfO2 and ZrO2 High-k Gate Dielectrics,” Appl. Phys. Lett. 84, 4017-19 (2004).

69. C.O. Chui, H. Kim, P.C. McIntyre, and K.C. Saraswat, “Atomic Layer Deposition of High-k Dielectric for Germanium MOS Applications – Substrate,” IEEE Electron Dev. Lett. 25, 274-6 (2004).

68. L.F. Schloss, H. Kim, and P.C. McIntyre, “Oxygen Permeability of Ferroelectric Thin Film Top Electrodes and Its Effect on Detectable Fatigue Cycling-Induced Oxygen Isotope Motion,” J. Mater. Res. 19, 1265-72 (2004).

67. H. Kim, A.F. Marshall, P.C. McIntyre, and K.C. Saraswat, “Crystallization    Kinetics and Microstructure-Dependent Leakage Current Behavior of Ultrathin HfO2 Dielectrics: In Situ Annealing Studies,” Appl. Phys. Lett. 84, 2064-66 (2004).

66. M.H. Cho, H.S. Chang, D.W. Moon, S.K. Kang, B.K. Min, D.H. Ko, H.S. Kim, P.C. McIntyre, J.H. Lee, J.H. Ku, and N.I. Lee, “Interfacial Characteristics of HfO2 Films Grown on Strained Si0.7Ge0.3 by Atomic-Layer Deposition,” Appl. Phys. Lett. 84, 1171-73 (2004).

65. H.S. Kim, P.C. McIntyre, and K.C. Saraswat, “Microstructural Evolution of ZrO2-HfO2 Nanolaminate Structures Grown by Atomic Layer Deposition,” J. Mater. Res. 19, 643-50 (2004).

64. S. Ramanathan, P.C. McIntyre, S. Guha, and E. Gusev, “Charge Trapping Studies on Ultrathin ZrO2 and HfO2 High-k Dielectrics Grown by Room Temperature Ultraviolet Ozone Oxidation,” Appl. Phys. Lett. 84, 389-91 (2004).

63. S. Ramanathan, P.C. McIntyre, J. Luning, P.S. Lysaght, Y. Yang, Z.Q Chen, and S. Stemmer, “Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics: Influence on the Unoccupied States” J. Electrochem. Soc. 150, F173-77 (2003).

62. H. Kim, C.O. Chui, K.C. Saraswat, and P.C. McIntyre, “Local Epitaxial Growth of ZrO2 on Ge (100) Substrates by Atomic Layer Epitaxy,” Appl. Phys. Lett. 83, 2647-49 (2003).

61. D.W. Wang, Q. Wang, A. Javey, R. Tu, H.J Dai, H. Kim, P.C. McIntyre, T. Krishnamohan, and K.C. Saraswat, “Germanium Nanowire Field-Effect Transistors with SiO2 and High-k HfO2 Gate Dielectrics,” Appl. Phys. Lett. 83, 2432-34 (2003).

60. R-V. Wang and P.C. McIntyre, “Point Defect Distributions and Their Electrical Effects on (Ba,Sr)TiO3/Pt Thin Films,” J. Appl. Phys. 94, 1926-33 (2003).

59. D.B. Aubertine, N. Ozguven, P.C. McIntyre, and S. Brennan, “Analysis of X-ray Diffraction as a Probe of Interdiffusion in Si/SiGe Heterostructures,” J. Appl. Phys. 94, 1557-64 (2003).

58. M.B. Kelman, P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, and J.F. Roeder, “Effect of Applied Mechanical Strain on the Ferroelectric and Dielectric Properties of Pb(Zr0.35Ti0.65)O3 Thin Films,” J. Appl. Phys. 93, 9231-36 (2003).

57. S. Ramanathan, D. Chi, P.C. McIntyre, C.J. Wetteland, and R. Tesmer, “Ultraviolet-Ozone Oxidation of Metal Films,” J. Electrochem. Soc. 150, F110-15 (2003).

56. S.Y. Lee, H. Kim, P.C. McIntyre, K.C. Saraswat, and J.S. Byun, “Atomic Layer Deposition of ZrO2 on W for Metal-Insulator-Metal Capacitor Application,” Appl. Phys. Lett. 82, 2874-2876 (2003).

55. L.F. Schloss and P.C. McIntyre, “Polarization Recovery of Fatigued Pb(Zr,Ti)O3 Thin Films: Switching Current Studies,” J. Appl. Phys. 93, 1743-47 (2003).

54. H. Kim, P.C. McIntyre, and K.C. Saraswat, “Effects of Crystallization on the Electrical Properties of Ultrathin HfO2 Dielectrics Grown by Atomic Layer Deposition,” Appl. Phys. Lett. 82, 106-08 (2003).

53. M.B. Kelman, P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, J.F. Roeder, and S. Brennan, “Structural Analysis of Coexisting Tetragonal and Rhombohedral Phases in Polycrystalline Pb(Zr0.35Ti 0.65)O3 Thin Films,” J. Mater. Res. 18, 173-9 (2003).

52. D.B. Aubertine, M.A. Mander, N. Ozguven, A.F. Marshall, P.C. McIntyre, J.O. Chu, and P.M. Mooney, “Observation and Modeling of the Initial Fast Interdiffusion Regime in Si/SiGe Multilayers,” J. Appl. Phys. 92, 5027-35 (2002).

51. H. Kim and P.C. McIntyre, “Spinodal Decomposition in Amorphous Metal-Silicate Thin Films: Phase Diagram Analysis and Interface Effects on Kinetics,” J. Appl. Phys. 92, 5094-102 (2002).

50. L.F. Schloss, P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, J.F. Roeder, and S.R. Gilbert, “Oxygen Tracer Studies of Ferroelectric Fatigue in Pb(Zr,Ti)O3 Thin Films,” Appl. Phys. Lett. 81, 3218-20 (2002).

49.  R.V. Wang, R.J. Becker, and P.C. McIntyre, “Effects of Long-Time DC Bias on D2O- and D2/N2-Annealed BST Thin Films,” J. Electroceramics  9, 25-30 (2002).

48. S. Ramanathan, P.C. McIntyre, J. Luning, P. Pianetta, and D.A. Muller, “Structural Studies of Ultrathin Zirconia Dielectrics,” Phil. Mag. Lett. 82, 519-28 (2002).

47. C.M. Perkins, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, and E. Shero, “Thermal Stability of Polycrystalline Silicon Electrodes on ZrO2 Gate Dielectrics,” Appl. Phys. Lett.  81, 1417-19 (2002).

46. C.O. Chui, S. Ramanathan, B.B. Triplett, P.C. McIntyre, and K.C. Saraswat, “Germanium MOS Capacitors Incorporating Ultrathin High-K Gate Dielectric,” IEEE Electron Dev. Lett. 23, 473-75 (2002).

45. S. Ramanathan and P.C. McIntyre, “Ultrathin Zirconia/SiO2 Dielectric Stacks Grown by Ultraviolet-Ozone Oxidation,” Appl. Phys. Lett. 80, 3793-95 (2002).

44. S. Ramanathan, C.M. Park, and P.C. McIntyre, “Electrical Properties of Thin Film Zirconia Grown by Ultraviolet Ozone Oxidation,” J. Appl. Phys. 91, 4521-27 (2002).

43. M.B. Kelman, L.F. Schloss, P.C. McIntyre, B.C. Hendrix, S.M. Bilodeau, and J.F. Roeder, “Thickness-Dependent Phase Evolution of Polycrystalline Pb(Zr0.35Ti0.65)O3 Thin Films,” Appl. Phys. Lett. 80, 1258-60 (2002).

42. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H.J. Dai, “High-k Dielectrics for advanced Carbon-Nanotube Transistors and Logic Gates,” Nature Mater. 1, 241-46 (2002).

41. S. Ramanathan, D.A. Muller, G.D. Wilk, C.M. Park, and P.C. McIntyre, “Effect of Oxygen Stoichiometry on the Electrical Properties of Zirconia Gate Dielectrics,” Appl. Phys. Lett. 79, 3311-13 (2001).

40. S. Ramanathan, G.D. Wilk, D.A. Muller, C.M. Park, and P.C. McIntyre, “Growth and Characterization of Ultrathin Zirconia Dielectrics Grown by Ultraviolet Ozone Oxidation,” Appl. Phys. Lett. 79, 2621-3 (2001).

39. S. Ramanathan, B.M. Clemens, P.C. McIntyre, and U. Dahmen, “Microstructural Study of Epitaxial Platinum and Permalloy/Platinum Films Grown on (0001) Sapphire,” Phil. Mag. A 81, 2073-94 (2001).

38. P.C. McIntyre, “Point Defect Equilibrium in Strontium Titanate Thin Films,” J. Appl. Phys. 89, 8074-84 (2001).

37. P.C. McIntyre, J.H. Ahn, R.J. Becker, R.V. Wang, S.R. Gilbert, L.W. Mirkarimi, M.T. Schulberg, “Deuterium in (Ba,Sr)TiO3 Thin Films: Kinetics and Mechanisms of Incorporation and Removal During Annealing,” J. Appl. Phys. 89, 6378-88 (2001).

36. C.M. Perkins, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, S. Haukka, and M. Tuominen, “Electrical and Materials Properties of ZrO2 Gate Dielectrics Grown by Atomic Layer Chemical Vapor Deposition,” Appl. Phys. Lett. 78, 2357-59 (2001).

35. M.C. Werner, I. Banerjee, R. Zhang, P.C. McIntyre, N. Tani, and M. Tanimura, “Dielectric Relaxation and Steady-State Leakage in Low-Temperature Sputtered (Ba, Sr)TiO3 Thin Films,” J. Appl. Phys. 89, 2309-13 (2000).

34. J.H. Ahn, P.C. McIntyre, L.W. Mirkarimi, S.R. Gilbert, J. Amano, and M. Schulberg, “Deuterium-Induced Degradation of (Ba,Sr)TiO3 Thin Films,” Appl. Phys. Lett. 77, 1378-80 (2000).

33. M.C. Werner, I. Banerjee, P.C. McIntyre, N. Tani, and M. Tanimura, “Microstructure of (Ba,Sr)TiO3 Thin Films Deposited by Physical Vapor Deposition at 480°C and Its Influence on the Dielectric Properties,” Appl. Phys. Lett. 77, 1209-11 (2000).

32. P.C. McIntyre, “Equilibrium Point Defect and Electronic Carrier Distributions Near Interfaces in Acceptor-Doped Strontium Titanate,” J. Am. Ceram. Soc. 83, 1129-36 (2000). 

31. T.M. Shaw, S. Trolier-McKinstry, and P.C. McIntyre, “Properties of Ferroelectric Films at Small Dimensions,” Ann. Rev. Mater. Sci. 30, 263-98 (2000).

30. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Interpretation of Ion Channeling Results from Epitaxial Pt Thin Films and Co/Pt Multilayers,” Nucl. Instruments Meth. B 136-138, 214-19 (1998).

29. P.C. McIntyre and S.R. Summerfelt, “Kinetics and Mechanisms of TiN Oxidation Beneath Pt Thin Films,” J. Appl. Phys. 82, 4577-85 (1997).

28. P.C. McIntyre, S.R. Summerfelt, and C.J. Maggiore, “Oxidation Kinetics of TiN Layers: Exposed and Beneath Pt Thin Films,” Appl. Phys. Lett. 70, 711-13 (1997).

27. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Epitaxy of Pt Thin Films on (001) MgO. II. Orientation Evolution from Nucleation through Coalescence,” Acta Mater. 45, 879-87 (1997).

26. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Epitaxy of Pt Thin Films on (001) MgO. I. Interface Energetics and Misfit Accommodation,” Acta Mater. 45, 869-78 (1997).

25. P.C. McIntyre, D.T. Wu, and M. Nastasi, “Interdiffusion in Epitaxial Co/Pt Multilayers,” J. Appl. Phys. 81, 637-45 (1997).

24. K.C. Walter, J.T. Scheuer, P.C. McIntyre, P. Kodali, N. Yu, and M. Nastasi, “Increased Wear Resistance of Electrodeposited Chromium through Applications of Plasma Source Ion Implantation Techniques,” Surf. Coatings Technol. 85, 1-6 (1996).

23. N. Yu, P.C. McIntyre, T.E. Levine, E.P. Giannelis, J.W. Mayer, and M. Nastasi, “Ion-beam-induced epitaxial crystallization of sol-gel zirconia thin films on yttria-stabilized zirconia,” Phil. Mag. Lett. 73, 359-68 (1996).

22. J.M. McHale, P.C. McIntyre, K.E. Sickafus, and N.V. Coppa, “Nanocrystalline BaTiO3 from Freeze-Dried Nitrate Solutions,” J. Mater. Res. 11, 1199-209 (1996).

21. P.C. McIntyre, K.G. Ressler, N. Sonnenberg, and M.J. Cima, “Transmission Electron Microscopy Investigation of Biaxial Alignment Development in YSZ Films Fabricated Using Ion Beam Assisted Deposition,” J. Vac. Sci. Technol. A 14, 210-15 (1996).

20. N. Yu, P.C. McIntyre, M. Nastasi, and K.E. Sickafus, “High-Quality Epitaxial Growth of Gamma-Alumina films on Alpha-Alumina Sapphire Induced by Ion-Beam Bombardment,” Phys. Rev. B 52,  17518-22 (1995).

19. N. Yu, Q.Z. Wen, D.R. Clarke, P.C. McIntyre, H. Kung, M. Nastasi, T.W. Simpson, I.V. Mitchell, and D.Q. Li, “Formation of Iron or Chromium Doped Epitaxial Sapphire Thin Films on Sapphire Substrates,” J. Appl. Phys. 78, 5412-21 (1995).

18. K. Nashimoto, M.J. Cima, P.C. McIntyre, and W.E. Rhine, “Microstructure Development of Sol-Gel Derived Epitaxial LiNbO3 Thin Films,” J. Mater. Res. 10, 2564-72 (1995).

17. N. Yu, T.W. Simpson, P.C. McIntyre, M. Nastasi, and I.V. Mitchell, “Doping Effects on the Kinetics of Solid-Phase Epitaxial-Growth of Amorphous Alumina Thin-Films on Sapphire,” Appl. Phys. Lett. 67, 924-26 (1995).

16. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Orientation Selection in Thin Platinum Films on (100) MgO,” J. Appl. Phys. 77, 6201-4 (1995).

15. P.C. McIntyre, B.P. Chang, N. Sonnenberg, and M.J. Cima, “Defect Formation in Epitaxial Oxide Dielectric Layers Due to Substrate Surface Relief,” J. Electron. Mater. 24, 735-45 (1995).

14. P.C. McIntyre, M.J. Cima, and A. Roshko, “Epitaxial Nucleation and Growth of Chemically Derived Ba2YCu3O7-x Thin Films on (001) SrTiO3,” J. Appl. Phys. 77, 5263-72 (1995).

13. D.H. Liebenberg, R.J. Soulen, T.L. Francavilla, W.W. Fullermora, P.C. McIntyre, and M.J. Cima, “Current-Voltage Measurements of Thin YBa2Cu3O6.9 Films Compared with a Modified Ambegaokar-Halperin Theory,” Phys. Rev. B 51, 11838-47 (1995).

12. P.C. McIntyre, M.J. Cima, and A. Roshko, “Effects of Substrate Surface Steps on the Microstructure of Epitaxial Ba2YCu3O7-x Thin Films on (001) LaAlO3,” J. Crystal Growth 149, 64-73 (1995).

11. D.H. Liebenberg, P.C. McIntyre, M.J. Cima, and T.L. Francavilla, “Critical Current Angle-Dependent Measurements of Thin (15 nm) Chemically-Derived YBa2Cu3O7-d Films in Fields to 5.5 T,” Physica C 235-240, 3069-70 (2004).

10. P.C. McIntyre and M.J. Cima, “Microstructural Inhomogeneities in Chemically Derived Ba2YCu3O7-x Thin Films: Implications for Flux Pinning,” J. Mater. Res. 9, 2778-88 (1994).

9. P.C. McIntyre and M.J. Cima, “Heteroepitaxial Growth of Chemically Derived Ex Situ Ba2YCu3O7-x Thin Films,” J. Mater. Res. 9, 2219-30 (1994).

8. D.H. Liebenberg, M.J. Cima, P.C. McIntyre and T.L. Francavilla, “Angular Dependence of Transport Current Near Critical at Fields to 4 T in Metalorganic Thin Films,” J. Superconductivity 7, 303-8 (1994).

7. A.C. Westerheim, P.C. McIntyre, S.N. Basu, D. Bhatt, L.S. Yu-Jahnes, A.C. Anderson, and M.J. Cima, “Comparison of the Surface Morphology and Microstructure of In Situ and Ex Situ Derived YBa2Cu3O7-x Thin Films,” J. Electron Mater. 22, 1113-20 (1993).

6. N. Sonnenberg, A.S. Longo, M.J. Cima, B.P. Chang, K.G. Ressler, P.C. McIntyre, and Y.P. Liu, “Preparation of Biaxially Aligned Cubic Zirconia Films on Pyrex Glass Substrates Using Ion-Beam Assisted Deposition,” J. Appl. Phys. 74, 1027-34 (1993).

5. P.C. McIntyre, M.J. Cima, J.A. Smith, R.B. Hallock, M.P. Siegal, and J.M. Phillips, “Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7-x on (001) LaAlO3,” J. Appl. Phys. 71, 1868-77 (1992).

4. D.H. Liebenberg, P.C. McIntyre, M.J. Cima, and T.L. Francavilla, “Angular Dependence of Critical Currents of High Temperature Superconducting Films in High Magnetic Fields Prepared by Metalorganic Deposition,” Cryogenics 32, 1066-70 (1992).

3. P.C. McIntyre, M.J. Cima, D.H. Liebenberg, and T.L. Francavilla, “Mixed-State Behavior in Large Magnetic Fields of High-Temperature Superconducting Films Prepared by Metalorganic Deposition,” Appl. Phys. Lett. 58, 2033-35 (1991).

2. P.C. McIntyre, M.J. Cima, M.F. Ng, R.C. Chiu, and W.E. Rhine, “Texture development in Ba2YCu3O7-x Films from Trifluoroacetate Precursors,” J. Mater. Res. 5, 2771-79 (1990).

1. P.C. McIntyre, M.J. Cima and M.F. Ng, “Metalorganic Deposition of High-Jc Ba2YCu3O7-x Thin-Films from Trifluoracetate Precursors onto (100) SrTiO3,” J. Appl. Phys. 68, 4183-87 (1990).

 

Refereed Conference/Symposia Proceedings    (McIntyre Ph.D. advisees in bold)

 

33. W. Melitz, E. Chagarov, T. Kent and A.C. Kummel, R. Droopad, J. Ahn, R. Long, and P.C. McIntyre, “Mechanism of Dangling Bond Elimination on As-rich InGaAs Surface,” IEEE International Electron Devices Meeting Technical Digest pp. 32.4.1-32.4.4 (2012).

32. S. Hu, I.A. Goldthorpe, A.F. Marshall, and P.C. McIntyre, “Undoped Ge Core-Si(Ge) Shell Nanowires: Synthesis, Local Composition and Strain,” ECS Trans. 50 [9], 635-44 (2012).

31. J. Ahn, B. Shin and P.C. McIntyre, “In-Situ As2 Decapping and Atomic Layer Deposition of Al2O3 on n-InGaAs(100),” ECS Trans.  45 [4], 183-88 (2012).

30. S. Swaminathan and P.C. McIntyre, “In Situ XPS in Atomic Layer Deposition of Oxides on Ge (100),” ECS Trans. 33 [6] 455-62 (2010).

29. P.C. McIntyre, H. Adhikari, I.A. Goldthorpe, A.F. Marshall, C.E.D. Chidsey, “Group IV semiconductor nanowire arrays: Different flavors of epitaxy,” Proc. of SPIE 7406, 740601 (2009).

28. D. Kuzum, A. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J.P. McVittie, P.A. Pianetta, P.C. McIntyre, and K.C. Saraswat,Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility,” IEEE International Electron Devices Meeting Technical Digest, 723-26 (2007).

27. P.C. McIntyre, “Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment,” ECS Trans. 11 [4], 235-49 (2007).

26. J. Ha, H. AlShareef, J. Chambers, Y. Sun, P. Pianetta, P. McIntyre, and L. Colombo, “Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface Structure & Property Changes,” ECS Trans. 11 [4], 213-18 (2007).

25. R. Chen, D.W. Porter, H. Kim, P.C. McIntyre, and S.F. Bent, “Area Selective Atomic Layer Deposition by Soft Lithography,” Mater. Res. Soc. Symp. Proc. 917, 161-166 (2006).

24. T.Sugawara, R. Sreenivasan, and P.C.  McIntyre, “Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes,” Mater. Res. Soc. Symp. Proc. 917, 1-7 (2006).

23. A.K. Okyay, A.M. Nayfeh, K.C Saraswat, N. Ozguven, A. Marshall, P.C. McIntyre, and T. Yonehara, “Strain Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for Integration with Si,” Proceedings of IEEE LEOS Annual Meeting, Montreal, Canada, 29 Oct. to 2 Nov., 2006, 2 (2006). 

22. N. Kamehara, K. Kurihara, J.D. Baniecki, T. Shioga, K. Nomura, and P.C. McIntyre, “High Performance Barium Strontium Titanate Thin Film Capacitors for Decoupling Applications,” Ceram. Trans. 174, 251-57 (2006).

21. P.C. McIntyre, D. Chi, C.O. Chui, H. Kim, K.I. Seo, K.C. Saraswat, R. Sreenivasan, T. Sugawara, F.S. Aguirre-Testado, and R.M. Wallace, “Interface Layers for High-k/Ge Gate Stacks: Are They Necessary?” ECS Trans. 3, 519-530 (2006).

20. P.C. McIntyre, H. Kim, and K.C. Saraswat, “Structural Evolution and Point Defects in Metal Oxide-Based High-k Gate Dielectrics,” in Defects in High-k Dielectrics (Springer, 2006), 109-120.

19.   R.-V. Wang, P.C. McIntyre, J.D. Baniecki, K. Nomura, S. Takeshi, and K. Kurihara, “Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films,” Mater. Res. Soc. Symp. Proc.  833, 29 (2005).

18. K.I. Seo, R. Sreenivasan, P.C. McIntyre, and K.C. Saraswat, “Improvement in High-k (HfO2/SiO2) Reliability by Incorporation of Fluorine,” IEEE International Electron Devices Meeting Technical Digest, 619-22 (2005).

17.   K. Uchida, R. Zednik, C.-H. Lu, H. Jagannathan, J. McVittie, P.C. McIntyre, and Y. Nishi, “Experimental Study of Biaxial and Uniaxial Strain Effects on Carrier Mobility in Bulk and Ultrathin-Body SOI MOSFETs,” IEEE International Electron Devices Meeting Technical Digest, 229 (2004).

16. R. Chen, H. Kim, P.C. McIntyre, and S.F. Bent, “Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-Assembled Monolayers,” Mater. Res. Soc. Symp. Proc. 811, 57-62 (2004).

15. D.B. Aubertine and P.C. McIntyre, “Interdiffusion in Coherent Si0.70Ge0.30/Si0.95Ge0.05 Superlattices,” Mater. Res. Soc. Symp. Proc. 795, 247-52 (2003).

14. C.O. Chui, H. Kim, J.P. McVittie, B.B Triplett, P.C. McIntyre, and K.C. Saraswat, “A Novel Self-Aligned Gate-Last MOSFET Process Comparing High-k Candidates,” 2003 International Semiconductor Device Research Symposium Extended Abstracts, 464-65 (2003).

13. C.O. Chui, H. Kim, P.C. McIntyre, and K.C. Saraswat, “A Germanium NMOSFET Process Integrating Metal Gate and Improved Hi-k Dielectrics,” IEEE International Electron Devices Meeting Technical Digest 18.3.1-4 (2003).

12. J.R. Jameson, P.B. Griffin, A. Agah, J.D. Plummer, H.S. Kim, D.V. Taylor, P.C. McIntyre, W.A. Harrison, IEEE International Electron Devices Meeting Technology Digest, 4.3.1-4 (2003).

11. C.O. Chui, H. Kim, D. Chi, B.B. Triplett, P.C. McIntyre, and K.C. Saraswat, “Ultrathin High-k Gate Dielectric Technology for Germanium MOS Applications,” 2002 Device Research Conference Extended Abstracts, 191-2 (2002).

10. S. Ramanathan and P.C. McIntyre, “Room Temperature Grown Zirconia/SiO2 Dielectric Stacks with 1 nm EOT,” 2002 Device Research Conference Extended Abstracts, 101-2 (2002).

9. J. Guo, S. Datta, M. Lundstrom, M. Brink, P. McEuen, A. Javey, H.J. Dai, H. Kim, P. McIntyre, “Assessment of Silicon MOS and Carbon Nanotube FET Performance Limits Using a General Theory of Ballistic Transistors,” International Electron Devices Meeting Technical Digest, 711-14 (2002).

8. T-S. Chen, D. Hadad, V. Balu, B. Jiang, S-H. Kuah, P.C. McIntyre, S.R. Summerfelt, M.J. Anthony, and J.C. Lee, “Ir-Electroded BST Thin Film Capacitors for 1 Giga-Bit DRAM Application,” International Electron Devices Meeting Technical Digest, 679-682 (1996).

7. P.C. McIntyre, C.J. Maggiore, and M. Nastasi, “Orientation Selection and Microstructural Evolution of Epitaxial Pt Films on (001) MgO,” Mater. Res. Soc. Symp. Proc. 355, 335-40 (1995).

6. T.W. Simpson, I.V. Mitchell, N. Yu, M. Nastasi, and P.C. McIntyre, “Crystallization Kinetics of Fe-Doped Al2O3,” Mater. Res. Soc. Symp. Proc. 357, 201-05 (1995).

5. N. Sonnenberg, K.G. Ressler, P.C. McIntyre, and M.J. Cima, “The Influence of Processing Parameters on the Development of Biaxially Aligned Zirconia Thin Films Deposited by Ion Beam Assisted Deposition,” Mater. Res. Soc. Symp. Proc. 341, 163-68 (1995).

4. B.P. Chang, P.C. McIntyre, N. Sonnenberg, and M.J. Cima, “Epitaxial Dielectric Planarization for Multilayer HTSC Structures,” Mater. Res. Soc. Symp. Proc. 341, 151-56 (1995).

3. B.P. Chang, N. Sonnenberg, P.C. McIntyre, M.J. Cima, J. Sun, and L.S. Yu-Jahnes, “Epitaxial Planarization Using Ion Beam Assisted Deposition,” Mater. Res. Soc. Symp. Proc. 316, 887-92 (1994).

2. P.C. McIntyre and M.J. Cima, “Microstructural Evolution During Epitaxial Growth of Chemically Derived Ba2YCu3O7-x Thin Films,” Mater. Res. Soc. Symp. Proc. 280, 371-74 (1993).

1. M.J. Cima, P.C. McIntyre, J.A. Smith, Jr., B.P. Chang, and R.B. Hallock, “Metalorganic Deposition of High-Jc Ba2YCu3O7-x Thin Films on Single Crystal Substrates,” Proc. XII Winter Meeting Low Temperature Physics, Superconducting Ceramics, 13-23 (1991).

 

 


Department of Materials Science and Engineering, Stanford University

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