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 100-nm pMOSFET Device Characteristics

We fabricated > 50 pMOSFETs with Lphysical ranging from 61 nm to 170 nm. The characteristics of a device with Leffective of 100 nm are shown below. A saturation current drive of 0.244 mA/Ám and saturated transconductance (gm) of 154 mS/mm are achieved at -2 V. The threshold voltage (Vt) is -0.41 V.

  uniform 100-nm gate over topography...............................

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