Electron beam lithography uses a finely focused beam of electrons to define patterns onto a polymer-coated wafer. This "resist" pattern can then be used as a stencil to define metal lines or as a protective mask to etch features into a semiconductor wafer. Specifically, the JEOL JBX 6300 lithography system uses a high-brightness field emission electron source, a 100 keV acceleration potential, a 25 Mega-Hertz deflection system and magnetic lenses to define a beam diameter as small as 2 nm and patterns in resist as small as 8 nm. The laser-controlled stage is capable of loading 1 cm square compound semiconductor chips, up to 200 mm (8 inch) diameter silicon substrates. Upcoming nano-device research will include: nano-apertures for near-field optics, photonic crystals, novel laser structures, quantum devices to study transport in compound semiconductors, nano-CMOS. nano-magnetic memory and x-ray zone plates.
Contact InformationRich Tiberio
Cognizant Faculty Advisor
Exposure: ZEP resist, 100 kV JEOL e-beam, 40 nm grating with ~ 8 nm lines. Image: low voltage SEM image of polymer resist at 100 kX mag. Image courtesy of Tiberio (Stanford).
Photonic crystal crossbeam structures in GaAs. Fabrication: ZEP resist 100KV JEOL ebeam, followed by PlasmaQuest chlorine etch and HF sacrificial layer (AlGaAs) removal. Image: Low voltage SEM image. Scale bars 200, 10 and 2 microns. Sonia Buckley (Vuckovic group).
In order to become a qualified user on the tool, you need to follow each of these steps in the order as listed here:
- complete the process to become lab member of SNC
- The JEOL 6300FS is located within the Nanopatterning Cleanroom at the basement of the Nanoscale Science and Engineering Building. In order to get access to the JEOL e-beam, you must follow the procedures for gaining access the the Nanopatterning Cleanroom.
- send an email to Rich Tiberio with a short description of your research project as well as a more detailed process flow for using the JEOL e-beam
- upon review of the project, Rich will contact you for further discussion and/or training