Blanka Magyari-Köpe

Senior Research Engineer

Stanford Nanodevices Group
Stanford University
Paul G. Allen 105
420 Via Palou Mall, Stanford, CA 94305

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Blanka Magyari-Köpe

Short Bio

Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Since 2006, she has been an engineering Research Associate and from 2011 a Senior Research Engineer in the Department of Electrical Engineering at Stanford University. Prior to this position she was a postdoctoral researcher in the Department of Materials Science and Engineering, University of California, Los Angeles.
Her research interests include adapting and applying high-precision, accurate, and efficient quantum mechanical modeling to real applications. She had been working on the analysis and fundamental understanding of electronic properties of novel and technologically relevant materials, i.e., perovskites, metal alloys, hydrogen storage materials, metal gate/high-k MOS structures and RRAM device materials. Currently, she is involved in projects that involve understanding the RRAM switching mechanism and the role and control of nanointerfaces between metallic, insulating, and semiconducting materials, seeking solutions to design and manipulate them at the atomic level in order to achieve increased performance of electronic devices. Dr. Magyari-Köpe is a member of the American Physical Society (APS), Materials Research Society (MRS), Institute of Electrical and Electronics Engineers (IEEE) and Electrochemical Society (ECS). She received a Swedish Institute Fellowship in 1997. She has given over 24 invited talks and has published more than 50 scientific papers.

Research interest

Main areas of interest include:
  • first principles simulation teqniques to study the structural and electronic implications of interfaces between various materials including ideal (atomically sharp) and with interlayers incorporating defects (vacancies or dopants) in multilayer thin films;
  • the resistive switching properterties of memristor devices in metal-oxide-metal structure, investigating the role of defects in the oxide and of the interfaces with electrodes;
  • oxide breakdown and reliability of the complementary metal-oxide-semiconductor gate structure;
  • uniaxial and biaxial strain effects on semiconductors band structure (Ge);
  • Fermi level unpinning mechanisms by interface doping in metal-semiconductor contacts, NiSi/Si;

Selected Recent Invited Presentations


  1. B. Magyari-Köpe and Y. Nishi, "Modeling the Resistive Switching Process in Transition Metal Oxide Based Non-Volatile Memory Devices", 16th International Workshop on Computational Electronics (IWCE), June 2013, Nara, Japan.
  2. B. Magyari-Köpe. K. Kamiya, K. Shitaishi and Yoshio Nishi, "Atomic-size Effects of the Conductive Filaments Formation and Rupture in Resistance Change Based Memory Devices", December 2012, Int. Conf. Small Sci. (ICSS), Orlando, USA.
  3. (Keynote) B. Magyari-Köpe and Y. Nishi, "Recent Progress in Modeling the Operation of Resistive Switching Memory Devices", October 2012, Electrochem. Society Meeting (ECS Prime), Honolulu, USA.
  4. S. Gupta, R. Chena, B. Vincent, D. Lin, B. Magyari-Köpe, M. Caymax, J. Dekoster, J. Harris, Y. Nishi, and K. Saraswat, "GeSn Channel n and p MOSFETs", October 2012, Electrochem. Society Meeting (ECS Prime), Honolulu, USA.
  5. B. Magyari-Köpe and Y. Nishi, "Resistive Switching in Transition Metal Oxide ReRAM Devices", September 2012, Solid State Devices and Materials (SSDM), Kyoto, Japan.
  6. B. Magyari-Köpe and Y. Nishi, "Progress towards understanding the resistive switching process in RRAM devices", August 2012, Flash Memory Summit, Santa Clara, USA
  7. B. Magyari-Köpe and Y. Nishi, "Recent progress in resistive switching memory", May 2012, European Materials Research Society (EMRS) Spring Meeting, Strasbourg, France
  8. B. Magyari-Köpe and Y. Nishi, "Modeling the resistance switching mechanism in RRAM devices: the role of oxygen vacancies and impurities", April 2012,
    Materials Research Society (MRS) Spring Meeting, San Francisco, USA.
  9. B. Magyari-Köpe and Y. Nishi, "Progress and challenges in ReRAM", April 2011,
    8th Annual Symposium on Emerging Non-Volatile Memory Technologies”, San Francisco Bay Area Nanotechnology Council, Santa Clara, CA, USA.
  10. B. Magyari-Köpe and Y. Nishi, "Ab initio simulations of the resistance switching in RRAM devices: the role of oxygen vacancies", October 2011, 8th International Symposium on Advanced Gate Stack Technology, Bolton Landing, NY, USA.
  11. B. Magyari-Köpe and Y. Nishi, "Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations", June 2011, Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors III, Hong-Kong, China.

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Blanka Magyari-Köpe
Last updated: 25 February, 2014