Winter 2005, Prof. Krishna Saraswat and Prof. Fabian Pease

Course Objective:

To expose students to the principles and models of various devices used in modern ICs, particularly silicon.

Intended Audience:

Seniors or first year graduate students in EE and related fields.

Course Description:

Fundamentals of carrier generation, transport, recombination and storage in semiconductors. Physical principles of operation of the p-n junction, metal semiconductor contacts, bipolar junction transitors, MOS capacitors, MOS field effect transitors. First order device models that reflect physical principles and are useful for integrated circuit analysis and design.

Credit: 3 units, Letter grade or P/NC.

Prerequisites:

EE111, EE112, EE116 or equivalent


Topics:

1. Overview of Silicon Technology

2. Physics of a Semiconductor in Equilibrium

3. Movement of Free Carriers in a Semiconductor

4. Physics of a Semiconductor in Non-equilibrium

5. Metal Semiconductor Contacts

6. P-N Junctions

7. MOS Capacitors

8. MOS Transistors

9. Bipolar Junction Transistors

10. Optoelectronics/photonics, Other Device Structures (as time permits)

See the first handout for the course syllabus.



Class schedule

Lecture Review Session
When TuTh 10:00 - 11:15 AM Before exams
Where 380 - 380C


Books, Notes, etc.

Text Book:

Robert Pierret, "Semiconductor Device Fundamentals", Addison-Wesley.

Lecture Notes:

Extensive class notes will be used by the instructor. A copy of the notes will be placed on the class web home page.

References:

1. Streetman, "Solid State Electronic Devices", Prentice Hall.

2. Muller and Kamins, "Device Electronics for Integrated Circuits", 2nd Edition, Wiley.

3. Semiconductor Physics & Devices, Irwin, by D. A. Newman

4. Sze, "Physics of Semiconductor Devices", Wiley.

5. Singh, "Semiconductor Devices: an Introduction", McGraw-Hill.

6. Modular Series on Solid State Device, Addison-Wesley

Volume I: Pierret, "Semiconductor Fundamentals"
Volume II: Neudeck, "PN Junction Diode"
Volume III: Neudeck, "Bipolar Junction Transistor"
Volume IV: Pierret, "Field Effect Devices"

Grading

Homework: 20%
Midterm exam: 25% Date to be announced
Final exam: 55% Date to be announced