140 GHz LNA Measurements Presented at IMS 2013

In collaboration with scientists at JPL and NGC, Patricia presented her recent measurements of three different InP 35 nm gate-length High Electron Mobility Transistor (HEMT) Low Noise Amplifiers (LNAs) at the 2013 International Microwave Symposium in Seattle, WA.  The measurements included a record low spot noise temperature for cryogenic HEMT LNAs: 46 K at 152 GHz.  The conference paper, “Low Noise Amplifiers for 140 GHz Wide-Band Cryogenic Receivers,” will be available online soon.  Abstracts can be found in the conference program.

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