Ananth Saran Yalamarthy

alt text 

Hi there! I received the B.Tech and M.S. degrees in Mechanical engineering from Indian Institute of Technology Madras (IIT-M) and Stanford University, in 2014 and 2016, respectively. I am currently doing my Ph.D. in Mechanical Engineering at Stanford University. My research work is primarily at the intersection of energy and electronics.

Contact:
Durand Building, 496 Lomita Mall, Stanford, CA, 94305
Phone: +650 307 9951
Email: ananthy [@] stanford [DOT] edu
Google scholar: [link]
CV: [link]

Journal Publications

  1. Dowling, K.M, Alpert, H.A., Zhang, P., Ramirez, A.N., Satterthwaite, P.F., Yalamarthy, A.S., Kock, H., Ausserlechner, U., and Senesky, D.G., “Nanovolt offset in AlGaN/GaN 2DEG Hall Plates using current spinning,” In Submission, 2018.

  2. Sattherwaite, P.F., Yalamarthy, A.S., Scandrette, N.A., Newaz, A.K.M., and Senesky, D.G., “High Responsivity, Low Dark Current Ultraviolet Photodetector based on AlGaN/GaN Interdigitated Transducer,” In Submission, 2018.

  3. Yalamarthy, A.S., So, H., Rojo, M.M, Suria, A.J., Xu, X., Pop, E., and Senesky, D.G., “Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering,” Advanced Functional Materials, 28, 22, 1705823, 2018. [PDF] [Cover]

  4. Yalamarthy, A.S., So, H., and Senesky, D.G., “Enhancement of thermoelectric characteristics in AlGaN/GaN films deposited on inverted pyramidal Si surfaces,” Applied Physics Letters, 111, 2, 021902, 2017. [PDF]

  5. Suria, A.J., Yalamarthy, A.S., Heuser, T., Bruefach, A., Chapin, C.A., So, H., and Senesky, D.G., “Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600°C in air,”Applied Physics Letters, 110, 25, 253505, 2017. [PDF]

  6. Hou, M., So, H., Suria, A.J., Yalamarthy, A.S. and Senesky, D.G., “Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In-situ Heating,” IEEE Electron Device Letters, 38, 1, 56, 2017. [PDF]

  7. Suria, A.J., Yalamarthy, A.S., So, H, and Senesky, D.G., “DC Characteristics of ALD-Grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 °C in Air,” Semiconductor Science and Technology, 31, 11, 115017, 2016. [PDF]

  8. Yalamarthy, A.S., and Senesky, D.G., “Strain- and Temperature-Induced Effects in AlGaN/GaN High Electron Mobility Transistors,” Semiconductor Science and Technology, 31, 3, 035024, 2016. [PDF] [Highlights of 2016]

Conferences (Peer Reviewed)

  1. Yalamarthy, A.S., Rojo, M.M., Bruefach, A., Pop, E., and Senesky, D.G., “Phonon Drag Enhancement of the Seebeck Coefficient in the AlGaN/GaN Two-Dimensional Electron Gas,” Eurotherm 111, Dec 2018, Levi, Finland.

  2. Alpert, H.A., Dowling, K.M., Ramirez, A.N., Yalamarthy, A.S., Kock, H., Ausserlechner, U., and Senesky, D.G., “Effect of Geometry on Sensitivity of AlGaN/GaN Hall Effect Sensors” International Workshop on Nitride Semiconductors (IWN), Nov. 2018, Kanazawa, Japan.

  3. Dowling, K.M, Alpert, H.A., Zhang, P., Ramirez, A.N., Yalamarthy, A.S., Kock, H., Ausserlechner, U., and Senesky, D.G., “The Effect of Bias Conditions on AlGaN/GaN 2DEG Hall Plates,” Solid-State Sensors, Actuators and Microsystems Workshop, Jun. 2018, Hilton Head, SC 2018.

  4. Yalamarthy, A.S., Miller, R.A., Dowling, K.M., and Senesky, D.G, “Piezoelectric 2DEG “Metal” Electrodes for High Responsivity AlGaN/GaN MSM Photodetectors,” Compound Semiconductor Week (CSW), May 2018, Boston, MA.

  5. Yalamarthy, A.S., Rojo, M.M., Bruefach, A., Pop, E., and Senesky, D.G., “Low-Temperature Seebeck Coefficient Enhancement in Gated AlGaN/GaN Heterostructures,” MRS Spring Meeting, Apr 2018, Phoenix AZ.

  6. Yalamarthy, A.S., So, H. and Senesky, D.G., “Temperature-dependent Thermoelectric Properties of AlGaN/GaN Films Grown on Inverted Pyramid Si Structures,” ASME InterPACK, Sept 2017, San Francisco CA.

  7. Hou, M., Suria, A.J., Yalamarthy, A.S., So, H. and Senesky, D.G., “2DEG-Heated AlGaN/GaN Micro-Hotplates for High-Temperature Chemical Sensing Microsystems,” Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head, SC, 2016.

  8. Shankar, A., Yalamarthy, A.S., Shah, T., Kelkar, V., Mallampalli, A., Vikram, A.A., Ravindran, R., Ramachandran, H. and Koilpillai, D., “Design of a large aperture Space-based Proton and Electron Energy Detector as payload of IITMSAT”, IEEE IconSpace, Aug 2015, Langkawi, Malaysia.

  9. Sivadas, N., Gulati, A., Kannapan, D., Yalamarthy, A.S., Dhiman, A.,Shankar, A., Prasad, N., Ramachandran, H., Koilpillai, D., “A Nano-satellite Mission to Study Charged Particle Precipitation from the Van Allen Radiation Belts caused due to Seismo-Electromagnetic Emissions” 5th Nano-Satellite Symposium, Tokyo, 2013.

  10. Yalamarthy, A.S., Dhiman, A.,Shankar, A.,Prasad, N., Sivadas, N. and Ramachandran, H., “Space-based Proton Electron Detector (SPEED) to Measure Fluctuation in the Energy Spectra of Protons and Electrons in the Upper Ionosphere”, CEDAR Workshop, Jun 2013, Boulder CO.

Invited Presentations

  1. “Engineering Thermal Transport in III-V Heterostructures”, 2017 GCEP Student Energy Lectures, Stanford University, Stanford CA. [link]

Original Project Papers (At Stanford)

  • Bhaskhar, N., Yalamarthy, A.S. and Arora, A., “Encoding the natural response of primate retina”, CS229 (Machine Learning), 2016, Stanford CA. [link]

  • Yalamarthy, A.S. and Bhaskhar, N., “Optimizing production time in multi-ink 3D Printing”, CS221 (Artificial Intelligence), 2017, Stanford CA. [link]

  • Jain, S.R., Yalamarthy, A.S., Broad, N.,“Thermal conductivity studies for defect characterization in 4H-Silicon Carbide (SiC)”, EE323 (Energy and Electronics), 2015, Stanford, CA.

  • Stanford Mechatronics: [ME218A] [ME218B] (Note: ME218B, Ranked 1 in Class)

  • Advanced Devices: [EE316], Memory Devices: [EE309]