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\title{6.152: PS4, Problem 4}
\author{Tony Hyun Kim} 
\date{} 

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Square aluminium MOS-capacitors ($250\times250\mu$m$^2$ and $500\times500\mu$m$^2$) were fabricated on $R_S = 48.3\Omega$ Si wafers and tested. Following SC-1/SC-2 of the bare wafers, a $454\pm5$nm-thick oxide was grown by $1$-hour dry oxidation at $1000^\circ$C. About $2500\AA$ of aluminum was deposited\footnote{Measured values haven't been posted on Stellar by time of writing} via PVD, and the backside oxide was etched. The metal was patterned via $365$nm lithography, and the final product was sintered for $15$ minutes at $425^\circ$C.

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