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L11 ANSWER 1 OF 1 REGISTRY COPYRIGHT 1996 ACS
RN 14808-60-7 REGISTRY
CN Quartz (SiO2) (9CI) (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN Quartz (8CI)
OTHER NAMES:
CN .alpha.-Quartz
CN Aventurine
CN Aventurine (quartz)
CN CRS 1101-17
CN Crystalite 5K
CN Crystalite A 1
CN Crystalite A 2
CN Crystalite AA
CN Crystalite C
CN Crystalite CRS
CN Crystalite SS
CN Crystalite VX-S 2
CN Crystalite VX-X
CN DQ 12
CN HHH
CN Inducarb 0.5-1
CN Marshalite
CN Millisil W 6
CN Millisil W 6EST
CN Plastorit
CN Rock crystal
CN SF 35
CN Siderite (SiO2)
CN Sifraco C 600
CN Sikron 3000
CN Sikron F 100
CN Sikron F 600
CN Sikron H 200
CN Sikron H 500
CN Sikron H 600
CN Sikron SF 300
CN Silbond 600EST
CN Silbond FW 600EST
CN Silbond FW 61EST
CN Silbond VP 810-10/1EST
CN TGL 16319
CN Tiger-eye
CN W 12
CN W 12 (filler)
DR 122304-48-7, 122304-49-8, 87347-84-0, 12425-26-2, 1317-79-9
MF O2 Si
CI MNS, COM
LC STN Files: AIDSLINE, ANABSTR, APILIT, APILIT2, APIPAT, APIPAT2,
BIOBUSINESS, BIOSIS, CA, CABA, CANCERLIT, CAPLUS, CAPREVIEWS, CEN,
CHEMCATS, CHEMLIST, CBNB, CHEMSAFE, CIN, CJACS, CSCHEM, CSNB,
DETHERM*, DIPPR*, IFICDB, IFIPAT, IFIUDB, IPA, JANAF*, MEDLINE,
MSDS-OHS, MSDS-SUM, NISTTHERMO*, PIRA, PNI, PROMT, RTECS*,
TOXLINE, TOXLIT, USPATFULL, VTB
(*File contains numerically searchable property data)
Other Sources: DSL**, EINECS**, TSCA**
(**Enter CHEMLIST File for up-to-date regulatory information)
DES 8:MN,QUARTZ
/ Structure 1 in file .gra /
206 REFERENCES IN FILE CAPREVIEWS
24738 REFERENCES IN FILE CA (1967 TO DATE)
80 REFERENCES TO NON-SPECIFIC DERIVATIVES IN FILE CA
24786 REFERENCES IN FILE CAPLUS (1967 TO DATE)
IDE CBIB Format
L11 ANSWER 1 OF 1 REGISTRY COPYRIGHT 1996 ACS
RN 14808-60-7 REGISTRY
CN Quartz (SiO2) (9CI) (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN Quartz (8CI)
OTHER NAMES:
CN .alpha.-Quartz
CN Aventurine
CN Aventurine (quartz)
CN CRS 1101-17
CN Crystalite 5K
CN Crystalite A 1
CN Crystalite A 2
CN Crystalite AA
CN Crystalite C
CN Crystalite CRS
CN Crystalite SS
CN Crystalite VX-S 2
CN Crystalite VX-X
CN DQ 12
CN HHH
CN Inducarb 0.5-1
CN Marshalite
CN Millisil W 6
CN Millisil W 6EST
CN Plastorit
CN Rock crystal
CN SF 35
CN Siderite (SiO2)
CN Sifraco C 600
CN Sikron 3000
CN Sikron F 100
CN Sikron F 600
CN Sikron H 200
CN Sikron H 500
CN Sikron H 600
CN Sikron SF 300
CN Silbond 600EST
CN Silbond FW 600EST
CN Silbond FW 61EST
CN Silbond VP 810-10/1EST
CN TGL 16319
CN Tiger-eye
CN W 12
CN W 12 (filler)
DR 122304-48-7, 122304-49-8, 87347-84-0, 12425-26-2, 1317-79-9
MF O2 Si
CI MNS, COM
LC STN Files: AIDSLINE, ANABSTR, APILIT, APILIT2, APIPAT, APIPAT2,
BIOBUSINESS, BIOSIS, CA, CABA, CANCERLIT, CAPLUS, CAPREVIEWS, CEN,
CHEMCATS, CHEMLIST, CBNB, CHEMSAFE, CIN, CJACS, CSCHEM, CSNB,
DETHERM*, DIPPR*, IFICDB, IFIPAT, IFIUDB, IPA, JANAF*, MEDLINE,
MSDS-OHS, MSDS-SUM, NISTTHERMO*, PIRA, PNI, PROMT, RTECS*,
TOXLINE, TOXLIT, USPATFULL, VTB
(*File contains numerically searchable property data)
Other Sources: DSL**, EINECS**, TSCA**
(**Enter CHEMLIST File for up-to-date regulatory information)
DES 8:MN,QUARTZ
/ Structure 2 in file .gra /
206 REFERENCES IN FILE CAPREVIEWS
24738 REFERENCES IN FILE CA (1967 TO DATE)
80 REFERENCES TO NON-SPECIFIC DERIVATIVES IN FILE CA
24786 REFERENCES IN FILE CAPLUS (1967 TO DATE)
REFERENCE 1: 125:74488 Manufacture of anisotropic permanent magnets
from sintered strontium ferrite-quartz mixtures. Bogdan, Boris N.;
Chubrin, Vladimir A.; Konopleva, Natalya N. (Nauchno-
Proizvodstvennoe Ob"edinenie "Magneton", USSR). Russ. RU 2044351 C1
950920 From: Izobreteniya 1995, (26), 254. (Russian). CODEN:
RUXXE7. APPLICATION: RU 93-93012873 930310.
REFERENCE 2: 125:74027 Plasma etching apparatus. Ueda, Yoichi;
Hayata, Hidenori (Sumitomo Metal Ind, Japan). Jpn. Kokai Tokkyo
Koho JP 08107102 A2 960423 Heisei, 5 pp. (Japanese). CODEN:
JKXXAF. APPLICATION: JP 94-239822 941004.
REFERENCE 3: 125:73786 Apparatus for manufacturing semiconductor.
Hoshino, Masakazu; Watanabe, Tomoji; Uchino, Toshuki (Hitachi Ltd,
Japan). Jpn. Kokai Tokkyo Koho JP 08078339 A2 960322 Heisei, 6 pp.
(Japanese). CODEN: JKXXAF. APPLICATION: JP 94-212360 940906.
REFERENCE 4: 125:73669 Semiconductor substrate for CCD solid imaging
device and manufacture thereof. Takizawa, Ritsuo (Sony Corp,
Japan). Jpn. Kokai Tokkyo Koho JP 08104592 A2 960423 Heisei, 7 pp.
(Japanese). CODEN: JKXXAF. APPLICATION: JP 95-125359 950524.
PRIORITY: JP 94-207957 940809.
REFERENCE 5: 125:73523 Modeling electrostatically deflectable
microstructures and air damping effects. Reuther, H. M.; Weinmann,
M.; Fischer, M.; Von Muench, W.; Assmus, F. (Institute Semiconductor
Engineering, Stuttgart University, Stuttgart, 70174, Germany).
Sens. Mater., 8(5), 251-269 (English) 1996. CODEN: SENMER. ISSN:
0914-4935.
REFERENCE 6: 125:72524 Growth of compound semiconductor crystals by
vertical Bridgman or gradient freeze method. Asahi, Toshiaki (Japan
Enajii Kk, Japan). Jpn. Kokai Tokkyo Koho JP 08109094 A2 960430
Heisei, 5 pp. (Japanese). CODEN: JKXXAF. APPLICATION: JP
94-244165 941007.
REFERENCE 7: 125:72520 Manufacture of cadmium telluride crystals and
molds for it. Yamashita, Sadao; Kawasaki, Shuichi; Piitaa,
Rudorufu; Fukuda, Tsuguo (Nippon Ketsusho Kogaku Kk, Japan). Jpn.
Kokai Tokkyo Koho JP 08104600 A2 960423 Heisei, 4 pp. (Japanese).
CODEN: JKXXAF. APPLICATION: JP 94-259064 940929.
REFERENCE 8: 125:71349 Optical fiber amplifiers and repeater
apparatus. Odani, Jun; Uno, Tomoaki; Mitsuta, Masahiro (Matsushita
Electric Ind Co Ltd, Japan). Jpn. Kokai Tokkyo Koho JP 08116118 A2
960507 Heisei, 11 pp. (Japanese). CODEN: JKXXAF. APPLICATION: JP
95-213730 950822. PRIORITY: JP 94-198301 940823.
REFERENCE 9: 125:70896 A self-mode-locked Ti:sapphire laser with the
pair of the quartz prism sequence. Xing, Qirong; Zhang, Weili; Li,
Peng; Wang, Chingyue (Dep. Precision Instrument, Tianjin Univ.,
Tianjin, 300072, Peop. Rep. China). Guangxue Xuebao, 16(1), 16-19
(Chinese) 1996. CODEN: GUXUDC. ISSN: 0253-2239.
REFERENCE 10: 125:69978 MICROMEGAS: a high-granularity
position-sensitive gaseous detector for high particle-flux
environments. Giomataris, Y.; Rebourgeard, Ph.; Robert, J. P.;
Charpak, G. (CEA/DSM/DAPNIA/SED-C.E.-Saclay, Gif/Yvette, 91191,
Fr.). Nucl. Instrum. Methods Phys. Res., Sect. A, 376(1), 29-35
(English) 1996. CODEN: NIMAER. ISSN: 0168-9002.
ALL Format
L11 ANSWER 1 OF 1 REGISTRY COPYRIGHT 1996 ACS
RN 14808-60-7 REGISTRY
CN Quartz (SiO2) (9CI) (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN Quartz (8CI)
OTHER NAMES:
CN .alpha.-Quartz
CN Aventurine
CN Aventurine (quartz)
CN CRS 1101-17
CN Crystalite 5K
CN Crystalite A 1
CN Crystalite A 2
CN Crystalite AA
CN Crystalite C
CN Crystalite CRS
CN Crystalite SS
CN Crystalite VX-S 2
CN Crystalite VX-X
CN DQ 12
CN HHH
CN Inducarb 0.5-1
CN Marshalite
CN Millisil W 6
CN Millisil W 6EST
CN Plastorit
CN Rock crystal
CN SF 35
CN Siderite (SiO2)
CN Sifraco C 600
CN Sikron 3000
CN Sikron F 100
CN Sikron F 600
CN Sikron H 200
CN Sikron H 500
CN Sikron H 600
CN Sikron SF 300
CN Silbond 600EST
CN Silbond FW 600EST
CN Silbond FW 61EST
CN Silbond VP 810-10/1EST
CN TGL 16319
CN Tiger-eye
CN W 12
CN W 12 (filler)
DR 122304-48-7, 122304-49-8, 87347-84-0, 12425-26-2, 1317-79-9
MF O2 Si
CI MNS, COM
LC STN Files: AIDSLINE, ANABSTR, APILIT, APILIT2, APIPAT, APIPAT2,
BIOBUSINESS, BIOSIS, CA, CABA, CANCERLIT, CAPLUS, CAPREVIEWS, CEN,
CHEMCATS, CHEMLIST, CBNB, CHEMSAFE, CIN, CJACS, CSCHEM, CSNB,
DETHERM*, DIPPR*, IFICDB, IFIPAT, IFIUDB, IPA, JANAF*, MEDLINE,
MSDS-OHS, MSDS-SUM, NISTTHERMO*, PIRA, PNI, PROMT, RTECS*,
TOXLINE, TOXLIT, USPATFULL, VTB
(*File contains numerically searchable property data)
Other Sources: DSL**, EINECS**, TSCA**
(**Enter CHEMLIST File for up-to-date regulatory information)
DES 8:MN,QUARTZ
/ Structure 3 in file .gra /
206 REFERENCES IN FILE CAPREVIEWS
24738 REFERENCES IN FILE CA (1967 TO DATE)
80 REFERENCES TO NON-SPECIFIC DERIVATIVES IN FILE CA
24786 REFERENCES IN FILE CAPLUS (1967 TO DATE)
REFERENCE 1
AN 125:74488 CA
TI Manufacture of anisotropic permanent magnets from sintered strontium
ferrite-quartz mixtures
IN Bogdan, Boris N.; Chubrin, Vladimir A.; Konopleva, Natalya N.
PA Nauchno-Proizvodstvennoe Ob"edinenie "Magneton", USSR
SO Russ.
From: Izobreteniya 1995, (26), 254.
CODEN: RUXXE7
PI RU 2044351 C1 950920
AI RU 93-93012873 930310
DT Patent
LA Russian
IC ICM H01F001-08
CC 77-3 (Magnetic Phenomena)
AB Title only translated.
ST sintered magnet strontium ferrite quartz mixt
IT Magnets
(sintered, anisotropic permanent magnets from sintered strontium
ferrite-quartz mixts.)
IT 12627-93-9, Strontium ferrite
RL: TEM (Technical or engineered material use); USES (Uses)
(ferrite, sintered; anisotropic permanent magnets from sintered
strontium ferrite-quartz mixts.)
IT 14808-60-7, Quartz, uses
RL: MOA (Modifier or additive use); USES (Uses)
(sintered mixt. with; anisotropic permanent magnets from sintered
strontium ferrite-quartz mixts.)
REFERENCE 2
AN 125:74027 CA
TI Plasma etching apparatus
IN Ueda, Yoichi; Hayata, Hidenori
PA Sumitomo Metal Ind, Japan
SO Jpn. Kokai Tokkyo Koho, 5 pp.
CODEN: JKXXAF
PI JP 08107102 A2 960423 Heisei
AI JP 94-239822 941004
DT Patent
LA Japanese
IC ICM H01L021-3065; C23F004-00
CC 76-11 (Electric Phenomena)
AB The plasma etching app. is made up of a reaction vessel, an upper
electrode, and a lower electrode as a sample holder, and a high
frequency is impressed between the electrodes. The upper electrode
is made from a high-purity Si, and has a quartz cover. The app. is
used for etching of a polysilicon film.
ST plasma etching app silicon electrode; polysilicon etching plasma
app; quartz cover plasma etching app
IT Sputtering
(etching, app. for etching polysilicon films)
IT Etching
(sputter, app. for etching polysilicon films)
IT 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(electrode cover of plasma etching app.)
IT 7440-21-3, Silicon, uses
RL: DEV (Device component use); USES (Uses)
(electrode of plasma etching app.)
REFERENCE 3
AN 125:73786 CA
TI Apparatus for manufacturing semiconductor
IN Hoshino, Masakazu; Watanabe, Tomoji; Uchino, Toshuki
PA Hitachi Ltd, Japan
SO Jpn. Kokai Tokkyo Koho, 6 pp.
CODEN: JKXXAF
PI JP 08078339 A2 960322 Heisei
AI JP 94-212360 940906
DT Patent
LA Japanese
IC ICM H01L021-205; H01L021-3065
CC 76-3 (Electric Phenomena)
AB In the app., such as CVD, comprising a rection container,
gas-supplement- and exhausting systems, wafer-heating and -cooling
systems, and plasma source, and used for film forming or etching of
a wafer; a substance differing from the reaction container is coated
on inner wall of the container. In the app., multiple substances
(differing from the reaction container) to be etched are arranged in
the container. Preferably, reaction container is made of quartz,
and the coating film Si3N4. A reaction products adhered on inner
wall of the container can be removed by etching without damaging the
container, and time to finish the etching is detd. by analyzing
changes of the waste gas concn. or film thickness.
ST semiconductor manuf CVD protective coating; etching app protective
coating semiconductor manuf; film deposition app semiconductor manuf
IT Semiconductor devices
Semiconductor materials
Vapor deposition processes
(CVD reaction chamber with protective inner wall coating for
semiconductor material etching and fabrication)
IT Etching
Sputtering
(app., CVD reaction chamber with protective inner wall coating
for semiconductor material etching and fabrication)
IT Electric discharge devices
(sputtering, CVD reaction chamber with protective inner wall
coating for semiconductor material etching and fabrication)
IT 7631-86-9P, Silicon dioxide, processes
RL: BYP (Byproduct); REM (Removal or disposal); PREP (Preparation);
PROC (Process)
(CVD reaction chamber with protective inner wall coating for
semiconductor material etching and fabrication)
IT 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(CVD reaction chamber with protective inner wall coating for
semiconductor material etching and fabrication)
IT 7790-91-2, Chlorine fluoride (clf3)
RL: NUU (Nonbiological use, unclassified); RCT (Reactant); USES
(Uses)
(CVD reaction chamber with protective inner wall coating for
semiconductor material etching and fabrication)
IT 12033-89-5, Silicon nitride, processes
RL: PEP (Physical, engineering or chemical process); TEM (Technical
or engineered material use); PROC (Process); USES (Uses)
(CVD reaction chamber with protective inner wall coating for
semiconductor material etching and fabrication)
REFERENCE 4
AN 125:73669 CA
TI Semiconductor substrate for CCD solid imaging device and manufacture
thereof
IN Takizawa, Ritsuo
PA Sony Corp, Japan
SO Jpn. Kokai Tokkyo Koho, 7 pp.
CODEN: JKXXAF
PI JP 08104592 A2 960423 Heisei
AI JP 95-125359 950524
PRAI JP 94-207957 940809
DT Patent
LA Japanese
IC ICM C30B015-10; C03B020-00; H01L023-14; H01L027-14
CC 76-3 (Electric Phenomena)
Section cross-reference(s): 74, 75
AB The semiconductor substrate is a single crystal grown from a
semiconductor melt in a quartz crucible which contains .ltoreq.0.1
ppm of alkali metal impurities. The process comprises forming a CCD
solid state imaging device on the substrate. The process reduces a
dark current and a no. of white dots in the CCD semiconductor
substrate which is formed by using CZ and MCZ methods.
ST charge coupled device semiconductor substrate; CCD semiconductor
substrate single crystal impurity
IT Crucibles
Semiconductor materials
(alkali metal impurities in quartz crucibles for making CCD
substrates)
IT Alkali metals, uses
RL: NUU (Nonbiological use, unclassified); USES (Uses)
(alkali metal impurities in quartz crucibles for making CCD
substrates)
IT Semiconductor devices
(charge-coupled, alkali metal impurities in quartz crucibles for
making CCD substrates)
IT 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(alkali metal impurities in quartz crucibles for making CCD
substrates)
REFERENCE 5
AN 125:73523 CA
TI Modeling electrostatically deflectable microstructures and air
damping effects
AU Reuther, H. M.; Weinmann, M.; Fischer, M.; Von Muench, W.; Assmus,
F.
CS Institute Semiconductor Engineering, Stuttgart University,
Stuttgart, 70174, Germany
SO Sens. Mater. (1996), 8(5), 251-269
CODEN: SENMER; ISSN: 0914-4935
DT Journal
LA English
CC 76-14 (Electric Phenomena)
AB Simulating the behavior of micromachined structures is essential to
understand or predict their properties. Since the different effects
influencing the behavior of the microstructures must be simulated
with special simulation tools, these tools are coupled. As an
example, the simulation of the deflection of a surface-micromachined
polysilicon cantilever driven by electrostatic forces is presented
in this paper. The calcd. overall deflection of the cantilever is
compared with exptl. results. The contour of the cantilever during
deflection due to the applied electrostatic field can be precisely
predicted by the simulation. On the other hand, the vibration of a
piezoelec. driven quartz resonator oscillating in air is simulated.
Exact knowledge of the velocity field of the surrounding air is
important in order to improve the performance of such a quartz
resonator, if it is used as a noncontact profile sensor. In this
work, the FEM program FIDAP is used for hydrodynamic simulations and
the FEM program ANSYS is applied for electrostatic, piezoelec. and
mech. simulations. Problems with simple geometry are simulated and
the results are compared with the anal. solns. so the calcns. can be
verified. An alternative to the comparison with anal. solvable
models is comparing the simulated behavior of the microstructures
with exptl. results. The described method of modeling microsystems
and their dependence on external fields suggests a possible way to
understand the properties of microsensors in order to improve their
selectivity and sensitivity by coupling simulation tools and using
them instead of expts.
ST microsensor electrostatic deflection simulation; quartz piezoelec
resonator air damping simulation
IT Oscillators and Resonators
(quartz, piezoelec.; modeling electrostatically deflectable
microstructures and air damping effects)
IT Semiconductor devices
(silicon cantilevers; modeling electrostatically deflectable
microstructures and air damping effects)
IT Electric field
(electrostatic, modeling electrostatically deflectable
microstructures and air damping effects)
IT Sensors
(miniaturized, modeling electrostatically deflectable
microstructures and air damping effects)
IT 7440-21-3, Silicon, uses
RL: DEV (Device component use); USES (Uses)
(cantilever; modeling electrostatically deflectable
microstructures and air damping effects)
IT 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(piezoelec. resonator; modeling electrostatically deflectable
microstructures and air damping effects)
REFERENCE 6
AN 125:72524 CA
TI Growth of compound semiconductor crystals by vertical Bridgman or
gradient freeze method
IN Asahi, Toshiaki
PA Japan Enajii Kk, Japan
SO Jpn. Kokai Tokkyo Koho, 5 pp.
CODEN: JKXXAF
PI JP 08109094 A2 960430 Heisei
AI JP 94-244165 941007
DT Patent
LA Japanese
IC ICM C30B011-00; C30B029-48
ICA H01L021-208
CC 75-1 (Crystallography and Liquid Crystals)
AB The title process comprises charging of a vapor pressure-controlling
element or compd. in a reservoir and material(s) having .gtoreq.2
elements in a crucible permeable for the vapor of the vapor
pressure-controlling element (e.g., from porous graphite, C, BN
sinter, Al2O3, or porous quartz) to be vacuum-sealed in a quartz
ampule, and placement of the ampule in a vertical furnace for
melting of the materials and growth therefrom while controlling the
vapor pressure with the reservoir. Decrease of the concn. of the
volatile element in the melt in progress of growth downward from the
surface of the melt is prevented by contact of the melt with the
vapor through the crucible wall, and a crystal uniform in compn. in
the vertical direction is obtained.
ST Bridgman vertical compd semiconductor; gradient freeze vertical
compd semiconductor; crucible vapor permeable growth compd
semiconductor; reserve vapor pressure control growth
IT Crucibles
(vapor-permeable; for growth of compd. semiconductors in quartz
ampules by vertical boat method with vapor pressure-controlling
reservoirs)
IT Crystal growth
(Bridgman, growth of compd. semiconductors in vapor-permeable
crucibles with vapor pressure-controlling reservoirs)
IT Crystal growth
(gradient-freeze, vertical; growth of compd. semiconductors in
vapor-permeable crucibles with vapor pressure-controlling
reservoirs)
IT 1344-28-1, Aluminum oxide, uses 7440-44-0, Carbon, uses
7631-86-9, Silica, uses 7782-42-5, Graphite, uses 10043-11-5,
Boron nitride, uses 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(for vapor-permeable crucible in vapor pressure-controlled
vertical boat growth of compd. semiconductors)
IT 1306-25-8P, Cadmium telluride, processes 178255-71-5P, Cadmium
zinc telluride (Cd0.97-0.98Zn0.02-0.03Te)
RL: PEP (Physical, engineering or chemical process); SPN (Synthetic
preparation); PREP (Preparation); PROC (Process)
(single crystal; growth in vapor-permeable crucibles with vapor
pressure-controlling reservoirs by vertical boat method)
REFERENCE 7
AN 125:72520 CA
TI Manufacture of cadmium telluride crystals and molds for it
IN Yamashita, Sadao; Kawasaki, Shuichi; Piitaa, Rudorufu; Fukuda,
Tsuguo
PA Nippon Ketsusho Kogaku Kk, Japan
SO Jpn. Kokai Tokkyo Koho, 4 pp.
CODEN: JKXXAF
PI JP 08104600 A2 960423 Heisei
AI JP 94-259064 940929
DT Patent
LA Japanese
IC ICM C30B029-48; C30B011-00; C30B035-00; H01L021-208
CC 75-1 (Crystallography and Liquid Crystals)
AB The title process comprises charging materials in a stoichiometric
ratio simultaneously with installation of a mold, which is made of a
no. of divided shapes from graphite or quartz and has vertically
penetrating hollows of a desired shape, into an ampul, evacuation
and sealing of the ampul, and growth of the crystal by the Bridgman
or gradient freeze method. Crystals of high resistance in a molded
shape are obtained by elimination of the portion grown on and above
the mold, where Cd is deficient due to evapn. of Cd into the upper
space in the ampul.
ST Bridgman growth cadmium telluride mold; gradient freeze growth
cadmium telluride
IT Molds (forms)
(for growth of cadmium telluride by Bridgman or gradient freeze
method)
IT Crystal growth
(Bridgman, of cadmium telluride in molded shapes in ampuls)
IT Crystal growth
(gradient-freeze, of cadmium telluride in molded shapes in
ampuls)
IT 1306-25-8, Cadmium telluride, processes
RL: PEP (Physical, engineering or chemical process); PROC (Process)
(crystal growth in molds placed in ampuls by Bridgman or gradient
freeze method)
IT 7782-42-5, Graphite, uses 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(growth of cadmium telluride by Bridgman or gradient freeze
method in molds from)
REFERENCE 8
AN 125:71349 CA
TI Optical fiber amplifiers and repeater apparatus
IN Odani, Jun; Uno, Tomoaki; Mitsuta, Masahiro
PA Matsushita Electric Ind Co Ltd, Japan
SO Jpn. Kokai Tokkyo Koho, 11 pp.
CODEN: JKXXAF
PI JP 08116118 A2 960507 Heisei
AI JP 95-213730 950822
PRAI JP 94-198301 940823
DT Patent
LA Japanese
IC ICM H01S003-10; G02F001-35; H01S003-07; H01S003-17; H04B010-17;
H04B010-16
CC 73-11 (Optical, Electron, and Mass Spectroscopy and Other Related
Properties)
AB The app. comprises a pump laser diode and Er-doped quartz fibers for
amplifying .gtoreq.2 signal lights (having different wavelengths and
different intensities) with the same gain.
ST optical fiber amplifier repeater app
IT Lasers
Optical fibers
(optical fiber amplifiers and repeater app.)
IT Optical imaging devices
(intensifiers, optical fiber amplifiers and repeater app.)
IT 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(optical fiber amplifiers and repeater app.)
IT 7440-52-0, Erbium, uses
RL: DEV (Device component use); MOA (Modifier or additive use); USES
(Uses)
(optical fiber amplifiers and repeater app.)
REFERENCE 9
AN 125:70896 CA
TI A self-mode-locked Ti:sapphire laser with the pair of the quartz
prism sequence
AU Xing, Qirong; Zhang, Weili; Li, Peng; Wang, Chingyue
CS Dep. Precision Instrument, Tianjin Univ., Tianjin, 300072, Peop.
Rep. China
SO Guangxue Xuebao (1996), 16(1), 16-19
CODEN: GUXUDC; ISSN: 0253-2239
DT Journal
LA Chinese
CC 73-10 (Optical, Electron, and Mass Spectroscopy and Other Related
Properties)
AB Dispersive formulas were derived for the paired prism sequence based
on the second and the third deriv. dispersive formulas proposed by
Fork et al. Calcns. using the proposed formulas showed that the
third-order dispersion for quartz prism sequence was smaller than
LaF prism pair under similar second-order dispersion. Exptl.
results of the self-mode-locked Ti:sapphire with quartz prism
sequence were in good agreement with the theor. anal.
ST laser quartz prism sequence dispersion formula
IT Lasers
(self-mode-locked titanium-sapphire laser with paired quartz
prism sequence)
IT 13709-38-1, Lanthanum fluoride 14808-60-7, Quartz, uses
RL: DEV (Device component use); USES (Uses)
(self-mode-locked titanium-sapphire laser with paired quartz
prism sequence)
REFERENCE 10
AN 125:69978 CA
TI MICROMEGAS: a high-granularity position-sensitive gaseous detector
for high particle-flux environments
AU Giomataris, Y.; Rebourgeard, Ph.; Robert, J. P.; Charpak, G.
CS CEA/DSM/DAPNIA/SED-C.E.-Saclay, Gif/Yvette, 91191, Fr.
SO Nucl. Instrum. Methods Phys. Res., Sect. A (1996), 376(1), 29-35
CODEN: NIMAER; ISSN: 0168-9002
DT Journal
LA English
CC 71-7 (Nuclear Technology)
AB A novel structure is described for a gaseous detector that is under
development at Saclay. It consists of a two-stage parallel-plate
avalanche chamber of small amplification gap (100 .mu.m) combined
with a conversion-drift space. It follows a fast removal of pos.
ions produced during the avalanche development. Fast signals
(.ltoreq.1 ns) are obtained during the collection of the electron
avalanche on the anode microstrip plane. The pos. ion signal has a
duration of 100 ns. The fast evacuation of pos. ions combined with
the high granularity of the detector provide a high rate capability.
Gas gains of up to 105 have been achieved.
ST gaseous detector high particle flux environment; radiation detector
high particle flux environment; two stage parallel plate avalanche
chamber; electroformed micromesh MICROMEGAS avalanche chamber;
position sensitive high granularity gaseous detector
IT Radiation counters and detectors
(avalanche, parallel-plate, MICROMEGAS high-granularity
position-sensitive gaseous detector for high particle-flux
environments)
IT 61762-54-7, Argon-methane mixt.
RL: DEV (Device component use); PEP (Physical, engineering or
chemical process); PRP (Properties); PROC (Process); USES (Uses)
(MICROMEGAS high-granularity position-sensitive gaseous detector
for high particle-flux environments)
IT 25036-53-7, Kapton
RL: NUU (Nonbiological use, unclassified); USES (Uses)
(anode substrate; MICROMEGAS high-granularity position-sensitive
gaseous detector for high particle-flux environments)
IT 7440-50-8, Copper, uses
RL: NUU (Nonbiological use, unclassified); USES (Uses)
(anode; MICROMEGAS high-granularity position-sensitive gaseous
detector for high particle-flux environments)
IT 7440-02-0, Nickel, uses
RL: NUU (Nonbiological use, unclassified); USES (Uses)
(electroformed micromesh; MICROMEGAS high-granularity
position-sensitive gaseous detector for high particle-flux
environments)
IT 14808-60-7, Quartz, uses
RL: NUU (Nonbiological use, unclassified); USES (Uses)
(fibers; MICROMEGAS high-granularity position-sensitive gaseous
detector for high particle-flux environments)
CN Format
L11 ANSWER 1 OF 1 REGISTRY COPYRIGHT 1996 ACS
CN Quartz (SiO2) (9CI) (CA INDEX NAME)
OTHER CA INDEX NAMES:
CN Quartz (8CI)
OTHER NAMES:
CN .alpha.-Quartz
CN Aventurine
CN Aventurine (quartz)
CN CRS 1101-17
CN Crystalite 5K
CN Crystalite A 1
CN Crystalite A 2
CN Crystalite AA
CN Crystalite C
CN Crystalite CRS
CN Crystalite SS
CN Crystalite VX-S 2
CN Crystalite VX-X
CN DQ 12
CN HHH
CN Inducarb 0.5-1
CN Marshalite
CN Millisil W 6
CN Millisil W 6EST
CN Plastorit
CN Rock crystal
CN SF 35
CN Siderite (SiO2)
CN Sifraco C 600
CN Sikron 3000
CN Sikron F 100
CN Sikron F 600
CN Sikron H 200
CN Sikron H 500
CN Sikron H 600
CN Sikron SF 300
CN Silbond 600EST
CN Silbond FW 600EST
CN Silbond FW 61EST
CN Silbond VP 810-10/1EST
CN TGL 16319
CN Tiger-eye
CN W 12
CN W 12 (filler)
RN Format
L11 ANSWER 1 OF 1 REGISTRY COPYRIGHT 1996 ACS
RN 14808-60-7 REGISTRY
RN CBIB Format
L11 ANSWER 1 OF 1 REGISTRY COPYRIGHT 1996 ACS
RN 14808-60-7 REGISTRY
REFERENCE 1: 125:74488 Manufacture of anisotropic permanent magnets
from sintered strontium ferrite-quartz mixtures. Bogdan, Boris N.;
Chubrin, Vladimir A.; Konopleva, Natalya N. (Nauchno-
Proizvodstvennoe Ob"edinenie "Magneton", USSR). Russ. RU 2044351 C1
950920 From: Izobreteniya 1995, (26), 254. (Russian). CODEN:
RUXXE7. APPLICATION: RU 93-93012873 930310.
REFERENCE 2: 125:74027 Plasma etching apparatus. Ueda, Yoichi;
Hayata, Hidenori (Sumitomo Metal Ind, Japan). Jpn. Kokai Tokkyo
Koho JP 08107102 A2 960423 Heisei, 5 pp. (Japanese). CODEN:
JKXXAF. APPLICATION: JP 94-239822 941004.
REFERENCE 3: 125:73786 Apparatus for manufacturing semiconductor.
Hoshino, Masakazu; Watanabe, Tomoji; Uchino, Toshuki (Hitachi Ltd,
Japan). Jpn. Kokai Tokkyo Koho JP 08078339 A2 960322 Heisei, 6 pp.
(Japanese). CODEN: JKXXAF. APPLICATION: JP 94-212360 940906.
REFERENCE 4: 125:73669 Semiconductor substrate for CCD solid imaging
device and manufacture thereof. Takizawa, Ritsuo (Sony Corp,
Japan). Jpn. Kokai Tokkyo Koho JP 08104592 A2 960423 Heisei, 7 pp.
(Japanese). CODEN: JKXXAF. APPLICATION: JP 95-125359 950524.
PRIORITY: JP 94-207957 940809.
REFERENCE 5: 125:73523 Modeling electrostatically deflectable
microstructures and air damping effects. Reuther, H. M.; Weinmann,
M.; Fischer, M.; Von Muench, W.; Assmus, F. (Institute Semiconductor
Engineering, Stuttgart University, Stuttgart, 70174, Germany).
Sens. Mater., 8(5), 251-269 (English) 1996. CODEN: SENMER. ISSN:
0914-4935.
REFERENCE 6: 125:72524 Growth of compound semiconductor crystals by
vertical Bridgman or gradient freeze method. Asahi, Toshiaki (Japan
Enajii Kk, Japan). Jpn. Kokai Tokkyo Koho JP 08109094 A2 960430
Heisei, 5 pp. (Japanese). CODEN: JKXXAF. APPLICATION: JP
94-244165 941007.
REFERENCE 7: 125:72520 Manufacture of cadmium telluride crystals and
molds for it. Yamashita, Sadao; Kawasaki, Shuichi; Piitaa,
Rudorufu; Fukuda, Tsuguo (Nippon Ketsusho Kogaku Kk, Japan). Jpn.
Kokai Tokkyo Koho JP 08104600 A2 960423 Heisei, 4 pp. (Japanese).
CODEN: JKXXAF. APPLICATION: JP 94-259064 940929.
REFERENCE 8: 125:71349 Optical fiber amplifiers and repeater
apparatus. Odani, Jun; Uno, Tomoaki; Mitsuta, Masahiro (Matsushita
Electric Ind Co Ltd, Japan). Jpn. Kokai Tokkyo Koho JP 08116118 A2
960507 Heisei, 11 pp. (Japanese). CODEN: JKXXAF. APPLICATION: JP
95-213730 950822. PRIORITY: JP 94-198301 940823.
REFERENCE 9: 125:70896 A self-mode-locked Ti:sapphire laser with the
pair of the quartz prism sequence. Xing, Qirong; Zhang, Weili; Li,
Peng; Wang, Chingyue (Dep. Precision Instrument, Tianjin Univ.,
Tianjin, 300072, Peop. Rep. China). Guangxue Xuebao, 16(1), 16-19
(Chinese) 1996. CODEN: GUXUDC. ISSN: 0253-2239.
REFERENCE 10: 125:69978 MICROMEGAS: a high-granularity
position-sensitive gaseous detector for high particle-flux
environments. Giomataris, Y.; Rebourgeard, Ph.; Robert, J. P.;
Charpak, G. (CEA/DSM/DAPNIA/SED-C.E.-Saclay, Gif/Yvette, 91191,
Fr.). Nucl. Instrum. Methods Phys. Res., Sect. A, 376(1), 29-35
(English) 1996. CODEN: NIMAER. ISSN: 0168-9002.
American Chemical Society