Selected Publications

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Journals

  1. Z. Bian, K. Zeng, and S. Chowdhury, “2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer,” IEEE Electron Device Lett., vol. 43,. no. 4, pp. 596-599, 2022. DOI: 10.1109/LED.2022.3149748

  2. S. Sharma, K. Zeng, S. Saha, and U. Singisetti, “Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage,” IEEE Electron Device Lett., vol. 41,. no. 6, pp. 836-839, 2020. DOI: 10.1109/LED.2020.2991146

  3. K. Zeng, A. Vaidya, and U. Singisetti, “A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance,” Applied Physics Express., vol. 12, no. 8, pp 081003, 2019. doi: 10.75671882-0786ab2e86

  4. K. Zeng, A. Vaidya, and U. Singisetti, “1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs,” IEEE Electron Device Lett., vol. 39, no. 9, pp. 1385–1388, 2018. doi: 10.1109/LED.2018.2859049

  5. K. Zeng and U. Singisetti, “Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations,” Appl. Phys. Lett., vol. 111, no. 12, p. 122108, 2017. doi: 10.1063/1.4991400

  6. K. Zeng, J. S. Wallace, C. Heimburger, K. Sasaki, A. Kuramata, J. A. G. Jr, and U. Singisetti, “Ga2O3 MOSFETs using Spin-on-Glass Source/Drain Doping Technology,” IEEE Electron Device Lett., vol. 38, no. 4, pp. 5–8, 2017. doi: 10.1109/LED.2017.2675544

  7. K. Zeng, Y. Jia, and U. Singisetti, “Interface State Density in Atomic Layer Deposited SiO2/β-Ga2O3 (¯201) MOSCAPs,” IEEE Electron Device Lett., vol. 37, no. 7, pp. 906–909, 2016. doi: 10.1109/LED.2016.2570521

  8. Y. Jia, K. Zeng, J. S. Wallace, J. A. Gardella, and U. Singisetti, “Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 ( 2¯01),” Appl. Phys. Lett., vol. 106, no. 10, p. 102107, 2015. doi: 10.1063/1.4915262

Conferences

  1. K. Zeng, S. Chowdhury, B. Gunning, R. Kaplar, and T. Anderson, “Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination”, in 2021 IEEE International Reliability Physics Symposium (IRPS), 21-25 March 2021, doi: 10.1109/IRPS46558.2021.9405165

  2. K. Zeng, A. Vaidya, and U. Singisetti, “710 V Breakdown Voltage in Field Plated Ga2O3 MOSFET”, in 76th Device Research Conference (DRC), 2018. (Poster)

  3. Ke Zeng and U. Singisetti, “Temperature Dependent Characterization of Ga2O3 MOSFETswith Spin-on-Glass Source/Drain Doping”, in 75th IEEE Device Research Conference, 2017, June 25-28. (Oral)

  4. K. Zeng, Y. Jia, and U. Singisetti, “Electrical Characterization of Atomic Layer Deposited SiO2/β-Ga2O3 Interface,” in 2016 Lester Eastman Conference (LEC), 2016, p. 64. (Poster)

  5. K. Zeng, K. Sasaki, A. Kuramata, T. Masui, and U. Singisetti, “Depletion and enhancement mode β-Ga2O3 MOSFETs with ALD SiO2 gate and near 400 V breakdown voltage,” in 74th IEEE Device Research Conference ( Technical Digest), 2016, vol. 105. (Poster)

  6. K. Zeng and U. Singisetti, “Conductance spectroscopy study of interface states in ALD deposited SiO2 on β-Ga2O3,” in The 1st International Workshop on Gallium Oxide and Related Materials, 2015, pp. 162–163.(Oral)